Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen Sanan Integrated Circuit Co., Ltd.

Hunan Sanan Semiconductor Co., Ltd.

Zhidong Lin

Jingfeng Bi

Liangjun Wang

Yonghong Tao

Weiping Xiong

Minghui Song

Guijiang Lin

Zhigao Peng

Jianqing Liu

Zhihao Wu

Jie Ding

A silicon carbide power diode device has a silicon carbide substrate on which a silicon carbide epitaxial layer with an active region is provided. A Schottky metal layer is on the active region, and a first electrode layer is on the Schottky metal layer. A first ohmic contact is on the silicon carbide substrate, and a second electrode layer is on the first ohmic contact. The active region of the silicon carbide epitaxial layer has a plurality of first P-type regions, a plurality of second P-type regions, and N-type regions. The first P-type regions and the second P-type regions lacking an ohmic contact are spaced apart with dimensions of the second P-type regions being minimized and the N-type regions being maximized for given dimensions of the first P-type region. Second ohmic contacts are located between the first P-type region and the Schottky metal layer.

Silicon carbide power diode device and fabrication method thereof

A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell () with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell () with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer () with a third band gap bigger than the second band gap on the second subcell, forming a third subcell () with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell () with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.

Four-junction quaternary compound solar cell and method thereof

A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiOmask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiOmask pattern; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a semiconductor material layer sequence of the inverted solar cell over the buffer layer with epitaxial growth; (6) bonding the semiconductor material layer sequence of the inverted solar cell with a supporting substrate; (7) selectively etching the SiOmask layer by wet etching; and (8) selectively etching the sacrificial layer by wet etching to lift off the growth substrate.

Fabrication method of inverted solar cells

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Xiamen, China

Zhidong Lin