Si Diamond Technology, Inc.

Other

Alien Technology Corporation

Zhidan Li Tolt

Zvi Yaniv

Richard Lee Fink

Leif Thuesen

A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

Low voltage electron source with self aligned gate apertures, fabrication method thereof, and devices using the electron source

Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source

A field emission electron source includes a substrate, a first conductive electrode terminated to provide electrons, an emitting composite layer for emitting electrons, and a second electrode insulated from the emitter layer and terminated to extract electrons through vacuum space. The emitting composite layer lies between and parallel to the said first and the second electrodes, and comprises nano-structures embedded in a solid matrix. One end of the nano-structures is truncated and exposed at the surface of the emitter layer so that both the length and the apex of the nano-structure are regulated and the exposed nano-tips are kept substantially the same distance from the gate electrode. The embedding material is chosen to form triple junctions with the exposed tip to further enhance the field.

Electron emitting composite based on regulated nano-structures and a cold electron source using the composite

An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 10/cm. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.

Low voltage electron source with self aligned gate apertures, and luminous display using the electron source

A protective layer for an electronic device and devices with a protective layer. In one exemplary embodiment, the protective layer includes two different layers which can be etched by the same etchant as which are at least one of optically or RF transparent.

Barrier, such as a hermetic barrier layer for O/PLED and other electronic devices on plastic

A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film.

Process for growing a carbon film

A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Cold cathode

A carbon deposition chamber is provided with several advantages. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner.

Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber

A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material. An emission site on the carbon film will emit electrons as a function of time, and as a function of distance across an emission site area.

Field emission material

A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.

Surface treatment process used in growing a carbon film

A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves.

Substrate support for use in a hot filament chemical vapor deposition chamber

Emitter material having a plurlarity of grains with interfaces in between

A carbon deposition chamber is provided with several advantages. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner.

Growing community of inventors

San Jose, CA, United States of America

Zhidan Li Tolt