Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Zhichao Zhou

Hui Xia

Meng Chen

Yue Wu

Zhiwei Tan

Yu-lien Chou

Yulien Chou

The present application provides a signal amplifying circuit and a display device. In the signal amplifying circuit, a gate of a driving transistor of a first inverter is connected to an output terminal of a reset module, and thereby a potential of the gate of the driving transistor of the first inverter changes when an impedance of an optoelectronic device changes, so that a potential change of each node of the first inverter amplifies the signal. Besides, a first compensation transistor is connected between a second gate of the first driving transistor and a first output node, and the potential of the first output node precharges to the second gate of the first driving transistor to adjust a threshold voltage of the first driving transistor, thereby erasing the difference of the threshold voltages in different transistors, and solving the technical problem of bad uniformity of signals amplified by the inverter.

Signal amplifying circuit and display device

The present invention teaches a pixel unit including thin film transistors (TFTs) and pixel electrodes corresponding to the TFTs. The pixel electrodes are connected to the source electrodes of the TFTs. Each pixel electrode includes multiple arc-shaped electrode units arranged at intervals along an axial direction around a periphery of a corresponding TFT. The electrode units are electrically connected together. The present invention adopts arc-shaped pixels (similar to concentric circles) so that liquid crystal molecules are closer to being isotropic. Then, by having different vertical alignment (VA) TFT designs in the primary pixel region and secondary pixel region and utilizing the differences in W/L and capacitance, different voltage levels for primary pixel electrode and secondary pixel electrode are achieved. The color shift problem is improved and the viewing angle is enhanced.

Pixel unit, manufacturing method thereof, and display device

The present invention provides an IPS TFT array substrate and a manufacturing method thereof. The manufacturing method of an IPS TFT array substrate of the present invention includes: forming a gate electrode, a scan line, a pixel electrode, and a common electrode with a first mask-involved operation, forming a first through hole and a second through hole in the gate insulation layer and an active layer with a second mask-involved operation, and forming a source electrode, a drain electrode, a data line, and a common electrode line with a third mask-involved operation. The present invention uses only three mask-involved operations to complete the manufacturing of an IPS TFT array substrate. Compared to the state of the art, the number of masks used is reduced, the manufacturing time is shortened, and thus the manufacturing cost is lowered. The IPS TFT array substrate of the present invention has a simple manufacturing process, a low manufacturing cost, and excellent electrical properties.

IPS thin-film transistor array substrate and manufacturing method thereof

A manufacturing method of TFT substrate and a TFT substrate are provided. The method provides a dual-gate structure symmetrically disposed on both sides of active layer, which prevents TFT threshold voltage from changing and improve TFT conduction state switching; by first manufacturing the active layer before the gate insulating layer to make the insulating layer directly grow on active layer, the contact interface between the gate insulating layer and active layer is improved, leading to further improving TFT conduction state switching. The TFT substrate makes the gate located between the source and the pixel electrode in vertical direction, and the dual-gate is symmetrically disposed on both sides of active layer to prevent TFT threshold voltage from changing and improve TFT conduction state switching, as well as improve the contact interface between the gate insulating layer and active layer, leading to further improving TFT conduction state switching.

Manufacturing method of TFT substrate and TFT substrate

The present invention teaches a TFT array substrate and its manufacturing method including the following steps. A data line and a ring-shaped source electrode are formed on a substrate. A first insulation layer is formed on the substrate. A ring trough exposing the source electrode is formed on the first insulation layer. A semiconductor active layer is formed in the ring trough. A channel is formed on the first insulation layer in an area surrounded by the ring trough. A gate line, a gate electrode in the channel, and a drain electrode connected to the semiconductor active layer are formed on the first insulation layer. A second insulation layer is formed on the first insulation layer, and a pixel via is formed on the second insulation layer. A pixel electrode is formed on the second insulation layer, and is connected to the drain electrode through the pixel via.

TFT array substrate and manufacturing method thereof

The present invention provides a VA type TFT array substrate and a manufacturing thereof. The manufacturing method for a VA type TFT array substrate of the present invention comprises that three pixel electrodes are formed in one pixel. The three pixel electrodes are connected to the same TFT but located on different structure layers. Therefore, the driving capabilities to liquid crystals are different. In the present invention, the three pixel electrodes are used to adjust the liquid crystal transmittances of three regions in one pixel, which is beneficial of keeping the brightness uniformity of the pixel when seeing from different angels, thereby enhancing the viewing angle of the VA type LCDs. The VA type TFT array substrate of the present invention disposes three pixel electrodes are formed in one pixel, which is beneficial of enhancing the viewing angle of the VA type LCDs.

VA type TFT array substrate and the manufacturing method thereof

The present disclosure relates to an array substrate, a manufacturing method thereof, and a display panel. Each of the pixel areas correspondingly connects with a data line and a scanning line. In each of the pixel areas, a source of a first TFT and a gate of a second TFT are on the same layer. A gate of the first TFT, a source and a drain of the second TFT, and the scanning line are on the same layer. As such, the present disclosure may avoid the color shift of the vertical alignment (VA) display and may improve the pixel aperture rate.

Array substrates, manufacturing methods thereof and display panels

The disclosure provides a manufacturing method for a thin film transistor, wherein a manufacturing method for a data line and a source/drain specifically includes: S: respectively manufacturing a data line material film layer and a source/drain material film layer; S: manufacturing a photoresist material film layer; S: performing a half-tone method to etch the photoresist material film layer, forming a photoresist layer, and obtaining a first etching substrate; S: performing a 4-mask process to etch the first substrate, forming the data line on a gate insulating layer, forming the source and the drain on an active layer, and forming a the back channel between the source and the drain to obtain the thin film transistor. The disclosure further provides a manufacturing method for an array substrate, wherein the manufacturing method for an array substrate includes the above-mentioned manufacturing method for a thin film transistor.

Manufacturing method of a thin film transistor and manufacturing method of an array substrate

The present application discloses an array substrate and a method of manufacturing the same. The array substrate includes a first insulating layer disposed on the substrate; a source electrode pattern disposed within the first insulating layer; an annular gate electrode pattern disposed on the first insulating layer and surrounded the periphery of the source electrode pattern; a second insulating layer covering on the annular gate electrode pattern; a semiconductor pattern disposed in the annular area of the annular gate electrode pattern, and is electrically connected to the exposed portion of the source electrode pattern, the semiconductor pattern is further electrical insulation to the annular gate electrode pattern through the second insulating layer; a pixel electrode disposed on the second insulating layer and electrically connected to a side of the semiconductor pattern remote from the substrate.

Array substrate and method of manufacturing the same

A method for manufacturing a TFT (Thin-Film Transistor) substrate is proposed. The method includes utilizing a first photomask process to form a buffer layer, a data line, a source electrode, a first scan line, a second scan line, and a gate electrode on a substrate; utilizing a second photomask process to form a first insulation layer, a second insulation layer, a first semiconductor layer, and a second semiconductor layer on the substrate; and utilizing a third photomask process to form a first conductor layer, an electrical connection portion, and a drain electrode on the substrate.

Method for manufacturing TFT substrate

A method for manufacturing an array substrate includes forming a buffer layer on a substrate; forming a source and a data line in the buffer layer, forming a first gate, a second gate, a first scan line, and a second scan line on the buffer layer, simultaneously; forming a semiconductor layer; forming a conductor layer by converting the semiconductor layer formed on the first scan line and the second scan line into a conductor; forming a first pixel electrode on the semiconductor layer and forming a second pixel electrode on the conductor layer, simultaneously.

Method for manufacturing array substrate

An array substrate includes a pixel structure formed on a substrate. The pixel structure is provided with a transistor region and a pixel region. A source electrode and a drain electrode in the pixel region are located in the transistor region and insulated from each other. A data line is electrically connected to the drain electrode. A pixel electrode is located in the pixel region and electrically connected to the source electrode. A copper metal layer is deposited on the data line and a drain electrode; a semiconductor active layer is formed between the source and drain electrodes and respectively connecting with the source and drain electrodes; a gate insulating layer overlying the data line and the drain electrode. The transparent electrode layer, the copper metal layer and the semiconductor active layer; the gate line and the gate electrode electrically connect to each other on the gate insulating layer.

Array substrate, fabricating method for the same and display device

The present invention provides an FFS type TFT array substrate and a manufacturing method thereof. The manufacturing method for an FFS type TFT array substrate of the present invention comprises that a gate electrode, a scanning line, a common electrode, and a common electrode line are formed in one photomask process. Comparing with the conventional art, the present invention simplifies the manufacturing process, with fewer photomasks, and a shorter processing time, therefore, the production cost is low. The fabrication process of the FFS type TFT array substrate of the present invention is simple, has low production cost and excellent electrical performance.

FFS type TFT array substrate and the manufacturing method thereof

The invention provides a manufacturing method of TFT substrate and a TFT substrate. The method provides a dual-gate structure symmetrically disposed on both sides of active layer, which prevents TFT threshold voltage from changing and improve TFT conduction state switching; by first manufacturing the active layer before the gate insulating layer to make the insulating layer directly grow on active layer, the contact interface between the gate insulating layer and active layer is improved, leading to further improving TFT conduction state switching. The TFT substrate makes the gate located between the source and the pixel electrode in vertical direction, and the dual-gate is symmetrically disposed on both sides of active layer to prevent TFT threshold voltage from changing and improve TFT conduction state switching, as well as improve the contact interface between the gate insulating layer and active layer, leading to further improving TFT conduction state switching.

The present disclosure discloses a copper etchant solution additives and a method for producing copper etchant solution. The method includes: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; before wet-etching, the copper etchant solution additives is added in the copper etchant solution, and the copper etchant solution is with a cupric ions (Cu2+) concentration of 700-1000 ppm. Through the above method, the present disclosure can improve etchant property of copper etchant solution to increase etching rate and uniformity.

Growing community of inventors

Guangdong, China

Zhichao Zhou