Semiconductor Manufacturing International (shanghai) Corporation

Delta Electronics (shanghai) Co., Ltd

Zhichao Li

Jian Min Jiang

GuangCai Fu

Yunfeng Zhang

Shouyan Wang

A precharge system and method are provided. The precharge system comprises a load circuit, a precharge circuit and a control circuit. The load circuit comprises an input terminal, an input switch and a bus capacitor. The precharge circuit comprises a precharge resistor and a precharge switch. The precharge method comprises: during the load circuit being in a precharge mode, controlling the input switch to be in an off state, and controlling the precharge switch to switch between the on and off state for multiple times; and during the load circuit being in a work mode, controlling the input switch to be in an on state. During the load circuit being in the precharge mode, when the precharge switch is in the on state, a consuming power of the precharge resistor is larger than a threshold power and is smaller than or equal to a limit power of the precharge resistor.

Precharge system and method

A method for forming a phase change random access memory is provided. The method includes providing a substrate having a surface; and forming a dielectric layer on the surface of the substrate. The method also includes forming a through-hole penetrating through the dielectric layer; and forming an adhesion layer on inner surface of the through-hole. Further, the method includes forming a metal layer doped with inorganic ions on the adhesion layer to reduce over-etching of the metal layer and increase heating efficiency of the metal layer on the surface of the adhesion layer; and forming a phase change layer on the dielectric layer, the adhesion layer and the doped metal layer.

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Shanghai, China

Zhichao Li