First Solar, Inc.

General Electric Company

Alliance for Sustainable Energy, LLC

Zhibo Zhao

Rick C Powell

Markus Gloeckler

Jigish Trivedi

Benyamin Buller

Andrei Los

Dan Damjanovic

Kenneth Ring

Gopal Mor

Dan Mao

Gang Xiong

David K Hwang

William Hullinger Huber

Kai Zhu

Boil Pashmakov

Feng Liao

Rui Shao

Benjamin Milliron

Aaron Roggelin

Dale Roberts

Aravamuthan Varadarajan

Chungho Lee

Le Chen

Vera Steinmann

Douglas Dauson

Daniel Damjanovic

Yu Yang

Tze-Bin Song

Arnold Allenic

Rajasingh Schwartz Israel

Joseph Jonathan Berry

Zhigang Ban

Ming Lun Yu

Tianji Zhao

Pratima V Addepalli

Akhlesh Gupta

Xilin Peng

Oleh Petro Karpenko

Xiaoping Li

Hongying Peng

Scott J Mills

Sreenivas Jayaraman

San Yu

Axel Finn Palmstrom

Chong Lim

Jing Guo

Jianjun Wang

Oomman K Varghese

Jiawei Li

David Ho

Dirk Weiss

Xueping Yi

Natasha Teran

Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Multilayer back contacts for perovskite photovoltaic devices

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Photovoltaic devices and method of manufacturing

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Methods for perovskite device processing by vapor transport deposition

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Photovoltaic device including a p-n junction and method of manufacturing

A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5&#xd7;10/cmto 2.5&#xd7;10/cmvia any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and Pat higher P(=I*Vproduct) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I, increased V, or both.

Ag-doped photovoltaic devices and method of making

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSTe) layer as are methods of forming such a photovoltaic device.

High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture

Photovoltaic device including a P-N junction and method of manufacturing

A method of manufacturing a photovoltaic device may include concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.

Photovoltaic device with oxide layer

A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.

Photovoltaic device and method of manufacture

A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure

A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Method of manufacturing a photovoltaic device

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Novi, MI, United States of America

Zhibo Zhao