Smartsens Technology (US) Inc.

Smartsens Technology (Cayman) Co., Limited

Smartsense Technology (u.s.) Inc.

Zhibin Xiong

Chen Hui Xu

Zexu Shao

Ko Ping Keung

Yaowu Mo

The present invention relates to an imaging apparatus, which comprises: a pixel array, comprising a plurality of pixels arranged in rows and columns, wherein at least one of the pixels comprises: a first capacitor configured to store a reset signal, and a second capacitor configured to store a pixel signal; a plurality of column circuits, wherein at least one of the column circuits reads the reset signal from the first capacitor, reads the pixel signal from the second capacitor, and generates difference between the reset signal and the pixel signal, wherein the pixel is configured to store the pixel signal to the second capacitor after the reset signal is stored to the first capacitor.

Imaging apparatus comprising 3D stacked global shutter

A pixel cell has four maskless phase detection photodiodes sharing the same readout amplifier, microlens and filter color. The four photodiodes are configured to operate in two adjacent pairs wherein the two adjacent pairs of photodiodes are separated by a light guide and are positioned under the single microlens such that light incident in a first direction is collected in a first pair of photodiodes of the two adjacent pairs of photodiodes and light incident in a second direction is collected in a second pair of photodiodes of the two adjacent pairs of photodiodes. The microlens has a plano-convex shape which causes light to be incident in two directions on photodiodes positioned under each of two sides of the microlens.

Four shared pixel with phase detection and full array readout modes

A pixel cell has a photodiode, a readout circuit, a vertical transfer transistor and a reflective structure. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry. The reflective structure is positioned between the readout circuit and the photodiode to reflect incident light, that passes through the photodiode without being absorbed, back towards the photodiode for a second chance at being absorbed.

Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor and reflective structure

A pixel cell has a photodiode, a readout circuit, and a vertical transfer transistor. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry.

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Granite Bay, CA, United States of America

Zhibin Xiong