Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Zhibiao Mao

George G Barclay

Wang Yueh

Gary Ganghui Teng

Anthony Zampini

Ashish A Pandya

Stefan J Caporale

Robert J Kavanagh

Joseph Mattia

Suzanne M Coley

Timothy G Adams

The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Phenolic/alicyclic copolymers and photoresists

The present invention provides new light absorbing compositions suitable for use as an antireflective coating ('ARC') with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.

Antireflective coatings with increased etch rates

The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same

The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Copolymers and photoresist compositions comprising same

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Shrewsbury, MA, United States of America

Zhibiao Mao