Huawei Technologies Co., Limited

Shenzhen Refond Optoelectronics Co., Ltd.

Zhi You

Nan Li

Liang Zhang

Zheng Zheng

Xiaoming Pei

Yulun Zhang

The present disclosure relates to polar decoding methods and apparatus. One example method includes obtaining a polar code sequence, determining at least one first information bit length corresponding to a code length of the polar code sequence, and decoding the polar code sequence based on blind detection by using the code length and the at least one first information bit length. The at least one first information bit length is a part of a preset information bit length set corresponding to the code length. A remaining part of the preset information bit length set is at least one second information bit length. The at least one second information bit length is excluded from being used for the blind detection. Each second information bit length is less than one or more information bit lengths in the at least one first information bit length.

Polar decoding method and apparatus

Provided is a semiconductor encapsulation structure, including: a device base () and a cover plate (). The device base is provided with a cavity () for accommodating a chip (). The device base is further provided with a cover-plate sintered layer (). The cover-plate sintered layer is metallized. The cover plate matches the device base. The cover plate is provided with a base sintered layer (). The base sintered layer is also metallized. The cover plate is connected to the base by sintering. The cover plate is connected to the base by sintering, so that low-temperature connection is achieved, thereby avoiding damage to the chip and electronic components in the base caused by high connection temperature. Furthermore, encapsulating costs are greatly reduced while ensuring connection reliability.

Semiconductor encapsulation structure

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Shenzhen, China

Zhi You