Promos Technologies, Inc

Grand Tek Advance Material Science Co., Ltd.

Zhi-Yong Wang

Hsueh-Tso Lin

Dick Zhong

Pao-Kuo Liu

Ja-Rong Hsieh

Polyphenylene ether resin composition includes 100 parts by weight of polyphenylene ether resin, 25 to 40 parts by weight of copolymer, and 0.01 to 0.02 parts by weight of initiator. The copolymer is (A) copolymer polymerized of (a) mono-functional monomer, (b1) bi-functional monomer, and (c) tri-functional monomer through radical polymerization, (B) copolymer polymerized of (a) mono-functional monomer and (b2) bi-functional monomer through radical polymerization, or (C) a combination thereof.

Polyphenylene ether resin composition

A process for fabricating silicon oxide filled, shallow trench isolation (STI), regions, in a semiconductor substrate, featuring the use of a disposable boro-phosphosilicate glass (BPSG), layer, used for planarization of various width, silicon oxide filled, STI regions, has been developed. After completely filling all STI shapes with a high density plasma (HDP), silicon oxide layer, resulting in a non-planar, HDP silicon oxide top surface topography, a BPSG layer is deposited. An anneal procedure is then performed resulting in a planar top surface topography of the reflowed BPSG layer. A chemical mechanical polishing procedure is next employed to remove the planar, reflowed BPSG layer, and portions of the underlying HDP silicon oxide, from the top surface of a silicon nitride stop layer, resulting in a planar top surface topography for all silicon oxide filled, insulator regions.

Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions

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Taipei, Taiwan

Zhi-Yong Wang