Applied Materials, Inc.

State Grid Shanghai Municipal Electric Power Company

Shandong Yunqing Environmental Sci-tech Co., Ltd

Zhi Xu

Wei Huang

Hong Qing Zhou

Mario Dave Silvetti

Ping Xu

Hai Long Li

Kuo-Shih Liu

Mei Wang

Zhe Song

Xiaodi Wang

He He

Gang Chen

Jialiang Yuan

Ramana Veerasingam

Pingping Xu

Shenfu Zhang

Haowen Zhao

Yuechao Chen

Tianyu Qian

Junchen Zhu

A multi-mechanism wet dust removal apparatus that circulates water and removes ambient dust, and a dust removal method. The multi-mechanism wet dust removal apparatus includes a dust collecting device, a dust settling and air-water separation device, a water circulating device, and a dust discharging device. The dust removal is achieved by dust collecting, dust settling, air-water separation and dust discharging. Water can be recycled and the dust removal method integrates multiple dust removal mechanisms.

Multi-mechanism wet dust removal apparatus and dust removal method

A device for preventing cables against external damage based on sound source localization comprises a power supply unit, and a sound source sensor unit, a camera unit, a signal processing unit and a wireless communication unit which are electrically connected to the power supply unit. The signal processing unit is connected to the sound source sensor unit, the camera unit and the wireless communication unit. The camera unit is associated with the sound source sensor unit. When the sound source sensor unit recognizes a target signal, the signal processing unit sends a trigger signal to the camera unit, and then the camera unit is triggered to replay a surveillance video to determine whether or not a target really exists. Compared with the prior art, the device has the advantages of being good in safety, high in reliability and the like.

Device for preventing cables against external damage based on sound source localization

Apparatus and methods for repairing silicon dangling bonds resulting from semiconductor processing are disclosed. The silicon dangling bonds can be repaired by introducing hydrogen radicals with substantially no hydrogen ions into the processing chamber to react with the silicon dangling bonds, eliminating them.

Remote hydrogen plasma with ion filter for terminating silicon dangling bonds

A method and apparatus for forming a semiconductor device. A semiconductor substrate is implanted with dopants. The substrate is subjected to a cleaning process employing electrically neutral nitrogen and fluorine radicals to produce an oxygen-free surface having dangling bonds. Before any further exposure to oxidizing gases, the substrate is annealed by thermal treatment to activate and distribute the dopants. A gate oxide layer is formed over the annealed surface. The apparatus performs all such treatments without breaking vacuum.

Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage

An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

Reduction of plasma edge effect on plasma enhanced CVD processes

Growing community of inventors

Shanghai, China

Zhi Xu