Taiwan Semiconductor Manufacturing Comp. Ltd.

Zhi-Ren Xiao

Zhiqiang Wu

Tzer-Min Shen

Chung-Wei Wu

Kuan-Ting Liu

Szu-Wei Huang

Yen-Tien Tung

Yin-Chuan Chuang

Yung-Chien Huang

A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Effective work function tuning via silicide induced interface dipole modulation for metal gates

A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer over the high-k gate dielectric layer; forming a silicide layer over the work function metal layer; annealing the structure such that a first portion of the work function metal layer that interfaces with the high-k gate dielectric layer is doped with silicon elements from the silicide layer; removing the silicide layer; and forming a bulk metal layer over the work function metal layer.

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Hsinchu, Taiwan

Zhi-Ren Xiao