Realtek Semiconductor Inc.

Zhi-Qiang Yang

Dong Qiu

Jia-Jia Cai

Bin Chen

A verifying method for an error checking and correcting (ECC) circuit of a static random-access memory (SRAM) is provided. The SRAM comprises a storage unit, an ECC circuit and a checking circuit. The ECC circuit receives an original data and an output first data. The checking circuit obtains a second data according to an error-injecting mask. The checking circuit performs a bit operation on the first data and the second data to obtain a third data. The checking circuit writes the third data into a test target area of the storage unit and the written data as a fourth data. The checking circuit reads the fourth data from the test target area. The ECC circuit obtains a fifth data and an error message according to the fourth data. The checking circuit obtains the bit error detection result according to the error message and the second data.

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Hsinchu, Taiwan

Zhi-Qiang Yang