Innocare Optoelectronics Corporation

Innolux Corporation

National Yang Ming Chiao Tung University

Zhi-Hong Wang

Chih-Hao Wu

Hsin-Hung Lin

Ya-Hsiang Tai

Yu-Lun Hsieh

Cheng Che Tu

An X-ray device including a sensing panel and a scintillator layer is provided. The sensing panel includes a substrate and a first pixel. The first pixel is disposed on the substrate and includes a first light sensing component and a first switch component. The first switch component is disposed on the first light sensing component. The scintillator layer is disposed on the sensing panel, and the first switch component is disposed between the scintillator layer and the first light sensing component.

X-ray device and sensing panel

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

X-ray device

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

Radiation sensing device

The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.

Growing community of inventors

Miao-Li County, Taiwan

Zhi-Hong Wang