International Rectifier Corporation

Infineon Technologies Americas Corp.

Zhi He

Robert A Beach

Jianjun Cao

Davide Chiola

A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.

High performance III-nitride power device

III-nitride power device

Method for fabricating a III-nitride semiconductor device

According to one disclosed embodiment, an enhancement mode high electron mobility transistor (HEMT) comprises a heterojunction including a group III-V barrier layer situated over a group III-V semiconductor body, and a gate structure formed over the group III-V barrier layer and including a P type group III-V gate layer. The P type group III-V gate layer prevents a two dimensional electron gas (2 DEG) from being formed under the gate structure. One embodiment of a method for fabricating such an enhancement mode HEMT comprises providing a substrate, forming a group III-V semiconductor body over the substrate, forming a group III-V barrier layer over the group III-V semiconductor body, and forming a gate structure including the P type group III-V gate layer over the group III-V barrier layer.

Enhancement mode group III-V high electron mobility transistor (HEMT) and method for fabrication

Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for high voltage circuit designs, have been disclosed. One exemplary structure comprises a first layer comprising a first III-nitride material, a second layer comprising a second III-nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer, an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a cathode forming an ohmic contact on said surface of said second layer, a field dielectric layer on said surface of said second layer for isolating said anode and said cathode, and an insulating material on said surface of said second layer and in contact with said anode.

Gated AlGaN/GaN Schottky device

III-nitride power semiconductor device

Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for high voltage circuit designs, have been disclosed. One exemplary structure comprises a first layer comprising a first III-nitride material, a second layer comprising a second III-nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (DEG) within said first layer, an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a cathode forming an ohmic contact on said surface of said second layer, a field dielectric layer on said surface of said second layer for isolating said anode and said cathode, and an insulating material on said surface of said second layer and in contact with said anode.

Gated AlGaN/GaN heterojunction Schottky device

III-nitride semiconductor device

The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.

Process for forming thick oxides on Si or SiC for semiconductor devices

An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof.

Nitrogen polar III-nitride heterojunction JFET

A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.

Growing community of inventors

El Segundo, CA, United States of America

Zhi He