The South China University of Technology

Zhenzhu Xu

Guoqiang Li

Fangliang Gao

An InN nanorod epitaxial wafer grown on an aluminum foil substrate () sequentially comprises the aluminum foil substrate (), an amorphous aluminum oxide layer (), an AlN layer () and an InN nanorod layer, () from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700&#xb0; C., the pressure of a reaction chamber is 4.0-10.0&#xd7;10Torr and the beam ratio of V/III is 20-40.

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Guangzhou, China

Zhenzhu Xu