Wisconsin Alumni Research Foundation

University of Texas System

The State University of New York

University of Chicago

Zhenqiang Ma

Jung-Hun Seo

Shaoqin Gong

Max G Lagally

Hao-Chih Yuan

Guogong Wang

Tzu-Hsuan Chang

Yei Hwan Jung

Dong Liu

Hongyi Mi

Paul Gregory Evans

Mark A Eriksson

Sang June Cho

Chang-Beom Eom

Xudong Wang

Zongfu Yu

Qiaoqiang Gan

Weidong Zhou

Daesu Lee

Munho Kim

Ming Zhou

Fei Wang

Zhenyang Xia

Kanglin Xiong

Ningyue Jiang

Huilong Zhang

Jaeseong Lee

Yunming Wang

Guoxuan Qin

Michael Phillips

Juhwan Lee

Paul Franklin Nealey

Michael Scott Arnold

Justin C Williams

Robert Michael Jacobberger

Qifeng Zheng

Haomin Song

David Matthew Gamm

Dong-Wook Park

Amelia Ann Schendel

Solomon Tadesse Mikael

David Gamm

Inkyu Lee

Yanfeng Tang

Kwangeun Kim

Namki Cho

Shisheng Xiong

Photoreceptor scaffolds that can be used for transplantation of organized photoreceptor tissue, with or without retinal pigment epithelial cells, which may improve grafted cell survival, integration, and functional visual rescue are disclosed herein. The scaffolds include a cell support layer having at least one honeycomb-shaped reservoir fluidly connected to a plurality of through-holes and at least one cell in the at least one honeycomb-shaped reservoir.

Mechanically stable and high cell density honeycomb retinal scaffold design for transplantation therapy of photoreceptor cells and retinal pigment epithelium

Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.

Flexible transistors with near-junction heat dissipation

Hyperspectral resonant cavity imaging spectrometers and imaging systems incorporating the resonant cavity spectrometers are provided. The spectrometers include an array of photodetectors based on photosensitive semiconductor nanomembranes disposed between two dielectric spacers, each of the dielectric spacers having a thickness gradient along a lateral direction, such that the resonant cavity height differs for different photodetectors in the array.

Compact hyperspectral spectrometers based on semiconductor nanomembranes

Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.

Contact photolithography-based nanopatterning using photoresist features having re-entrant profiles

Photoreceptor scaffolds and scaffold systems including the photoreceptor scaffolds are described herein. The scaffolds and scaffold systems can be used for transplantation of organized photoreceptor tissue, with or without RPE, which may improve grafted cell survival, integration, and functional visual rescue. Particularly, the photoreceptor scaffold is structured from a biocompatible film, patterned with an array of unique through-holes having a curvilinear cell receiver and at least one cell guide channel.

Photoreceptor scaffold for in vitro modeling and transplantation therapy

The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.

High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits

Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities

Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.

Hybrid tandem solar cells with improved tunnel junction structures

Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).

High performance, high electron mobility transistors with graphene hole extraction contacts

Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VOthat are composed of a plurality of connected crystalline VOdomains having the same crystal structure and orientation.

Vanadium dioxide-based optical and radiofrequency switches

Power generators that incorporate porous electric generation layers composed of mechanoradical-forming polymers are provided. Also provided are methods for using the generators to convert mechanical energy into and electrical signal to power electronic devices. The porous electric generation material includes an organic polymer that forms free radicals when covalent bonds are homolytically ruptured upon the application of a compressive force to the porous structure.

Flexible compact nanogenerators based on mechanoradical-forming porous polymer films

Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers

P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junction has a positive electron affinity and is passivated by a thin layer of inorganic material that provides a tunneling layer that passivates the bonding interface states, without hindering carrier transport across the interface.

P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers

Growing community of inventors

Middleton, WI, United States of America

Zhenqiang Ma