Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Zhenqi Zhang

Wenhai Mei

Aidi Zhang

Zhihong Wu

Xiaoyuan Zhang

Haowei Wang

Provided by the present disclosure are a quantum dot structure, a quantum dot light emitting device, and a manufacturing method. The quantum dot structure comprises: a quantum dot body; a first ligand, the first ligand being connected to one side surface of the quantum dot body by means of a first coordinate bond, and the first ligand having the property of regulating the transmission rate of a first charge carrier; and a second ligand, the second ligand being connected to another side surface of the quantum dot body by means of a second coordinate bond, and the second ligand having the property of regulating the transmission rate of a second charge carrier, where the charge polarities of the second charge carrier and the first charge carrier are different.

Quantum dot structure, quantum dot light emitting device, and manufacturing method

A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irradiation reacts with the ligands on the surfaces of the quantum dots, to allow the ligands to fall off from the surfaces of the quantum dots, so that solubility of the quantum dots is changed to cause the quantum dots to undergo coagulation; and removing a portion of the film layer which is not irradiated by the light of the preset wavelength, to form a patterned quantum dot portion of the quantum dot layer in the quantum dot reserved area.

Method for patterning quantum dot layer, method for manufacturing light emitting device

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Quantum dot light-emitting device, manufacturing method and display device

Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer

Embodiments of the present disclosure provide a quantum dot ligand, a quantum dot material, and a quantum dot light emitting device. In a quantum dot ligand of general formula (I), n is 1, 2, 3, or 4; two of X, Y, and Z are G1 group and G2 group, respectively, and the remaining one is selected from the group consisting of G1 group, G2 group, and hydrogen, wherein the G1 group, for each occurrence, is independently selected from —(CH)-L-(CH)—R, wherein Ris a coordination group, m is 0 to 6, n is 0 to 6, and L is a divalent group or absent; the G2 group, for each occurrence, is independently selected from a Calkyl having a carbon chain with more than 4 carbon atoms.

Quantum dot ligand, quantum dot material and quantum dot light emitting device

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Ligand, ligand quantum dot, quantum dot layer and method for patterning the same

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

The present disclosure provides a method for patterning a nanoparticle layer, including steps of: (S1) connecting a first base to a surface of a predetermined area of a substrate, to form a substrate modified with the first base in the predetermined area of the substrate; (S2) depositing the nanoparticle in the predetermined area of the substrate, to form a nanoparticle layer in the predetermined area of the substrate by self-assembling, a ligand of the nanoparticle includes a second base, and the first base and the second base being connected by a hydrogen bond; and (S3) removing the nanoparticle in a non-predetermined area of the substrate.

Method for patterning nanoparticle layer, quantum dot light emitting device and display device all fees

A display panel comprises includes: a base substrate; a first electrode layer and a second electrode layer on a side of the base substrate; a light-emitting layer between the first electrode layer and the second electrode layer; and a carrier functional layer located at least one of between the first electrode layer and the light-emitting layer, and between the second electrode layer and the light-emitting layer. The light-emitting layer has a plurality of light-emitting portions with different emergent light wavebands; and the carrier functional layer has a plurality of carrier functional portions corresponding to the plurality of light-emitting portions, the plurality of carrier functional portions having molecular chains, which is formed by cross-linking of monomers containing functional groups under light irradiation.

Display panel, display device and fabricating method of display panel comprising carrier functional layer having molecular chanins formed by cross-linking under light irradiation

The present disclosure provides a light emitting device and a display apparatus. The light emitting device includes: a substrate; a first electrode, a functional layer and a second electrode which are sequentially arranged on the substrate, where the functional layer at least includes a light emitting layer, a dielectric layer is arranged between at least one of the first electrode and the second electrode and the functional layer, metal nanoparticles are arranged in the dielectric layer, and a localized plasmon resonance frequency of the metal nanoparticles is matched with a wavelength of light emitted by the light emitting layer.

Light emitting device and display apparatus

A display substrate includes: a backplane; a first electrode layer disposed on a side of the backplane; and a light-emitting layer disposed on a side of the first electrode layer away from the backplane. The light-emitting layer includes nanoparticles and a product that is obtained by an electrochemical reaction of electrochemically active groups contained in first organic ligands coordinated to the nanoparticles. The nanoparticles are cross-linked together through the product.

Display substrate and method of manufacturing the same, and display apparatus

A displaying base plate including multiple pixels. The first sub-pixel includes a first electrode, a first inorganic layer and a first quantum-dot layer sequentially stacked; the first inorganic layer includes a first inorganic material modified by a first group, and the first quantum-dot layer includes a first quantum dot modified by a first ligand; the second sub-pixel includes a second electrode, a second inorganic layer and a second quantum-dot layer sequentially stacked; the second inorganic layer includes a second inorganic material modified by a second group, and the second quantum-dot layer includes a second quantum dot modified by a second ligand; the third sub-pixel includes a third electrode, a third inorganic layer and a third quantum-dot layer sequentially stacked; and the third inorganic layer includes a third inorganic material modified by a third group, and the third quantum-dot layer includes a third quantum dot modified by a third ligand.

Displaying base plate and fabricating method thereof, and display panel

A ligand-modified quantum dot composition, a ligand-modified quantum dot layer, preparation methods thereof, and a quantum dot light emitting diode are provided. Segment B of the ligand modifier in the ligand-modified quantum dot composition is a chain-cleavable segment, that is, segment B is a longer molecular chain, so that the material has good solubility and stability, thus the ligand-modified quantum dot composition is present in the form of a solution or ink, etc. Segment B itself is not very stable and may be cleaved under certain conditions. In specific applications, the group in segment B may be cleaved by heating or illumination, so that the ligand modifier becomes a short molecular chain ligand, thereby making the quantum dots densely stack and improving the carrier transfer performance.

Growing community of inventors

Beijing, China

Zhenqi Zhang