No. 24 Research Institute of China Electronics Technology Group Corporation

Zhengyuan Zhang

Ruzhang Li

Yan Wang

Hequan Jiang

Mingyuan Xu

Peijian Zhang

Sheng Qiu

Yonghong Dai

Feiyu Jiang

Xiyi Liao

Xian Chen

A voltage control method and a voltage control circuit for an anti-fuse memory array, including: obtaining a storage data address, dividing the storage data address into multiple subdata addresses, decoding each subdata address to obtain a corresponding group of decoder output signals, converting the corresponding group of decoder output signals into a group of control signals by a corresponding group of high voltage converters; connecting multiple groups of data selectors in series, outputting selection voltages input to each group of data selectors to an anti-fuse unit under the control of the corresponding group of control signals; programming or reading an anti-fuse unit; the selection voltages include one of a programming selection voltage, a reading selection voltage, and a non-designated selection voltage. The present disclosure reduces the number of transistors and saves layout areas when the programming or reading operation is performed.

Voltage control method and voltage control circuit for anti-fuse memory array

Growing community of inventors

Chongqing, China

Zhengyuan Zhang