Boe Technology Group Co., Ltd.

Ordos Yuansheng Optoelectronics Co., Ltd.

Boe Technology Groupco., Ltd.

Zhengyin Xu

Xiaolong Li

Jian Min

Tao Gao

Yang Liu

Dong Li

Dan Wang

Shuai Zhang

Youwei Wang

Liangjian Li

Ping Song

Rui Hong

Guanyin Wen

Wei Lin Lai

Chien Pang Huang

The present disclosure provides a display substrate, a manufacturing method thereof and a display panel. The display substrate includes a base substrate and a plurality of sub-pixels of different colors on the base substrate, wherein the plurality of sub-pixels include green sub-pixels, each of which includes an anode, a luminescent layer, and a cathode sequentially stacked in a direction away from the base substrate. The luminescent layer includes a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked in the direction away from the base substrate; a molar ratio of P-type molecules to N-type molecules in a host material of the first sub-layer is greater than that of the second sub-layer, which in turn is greater than that of the third sub-layer.

Display substrate, manufacturing method thereof and display panel

A display device includes a sub-pixel unit, the sub-pixel unit includes: a reflective liquid crystal display unit with a reflective display region, including a liquid crystal layer and a reflective layer; and a electroluminescent display unit with a light-emitting display region, wherein the light-emitting display region is overlapped with the reflective display region; wherein the reflective layer and the electroluminescent display unit are located on both sides of the liquid crystal layer respectively.

Display device and driving method thereof

A display substrate, a manufacturing method thereof and a display device are disclosed. The method includes: forming a pixel defining layer being doped with a heat-generating material capable of generating heat under specified conditions; sequentially forming a first carrier transport layer, a light-emitting material layer and a second carrier transport layer, wherein orthographic projections of the first and second carrier transport layers and the pixel defining layer on the base substrate have an overlapping region; controlling the heat-generating material to generate heat under specified conditions, and allowing a material of the first carrier transport layer to mix with a material of the second carrier transport layer in the overlapping region.

Display substrate, manufacturing method thereof, and display device

The present application discloses a method of fabricating a polycrystalline silicon thin film transistor, the method including forming an amorphous silicon layer on a base substrate having a pattern corresponding to a polycrystalline silicon active layer of the thin film transistor; the amorphous silicon layer having a first region corresponding to a source electrode and drain electrode contact region in the polycrystalline silicon active layer and a second region corresponding to a channel region in the polycrystalline silicon active layer; forming a first dopant layer on a side of the second region distal to the base substrate; forming a second dopant layer on a side of the first region distal to the base substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the second dopant layer to form the polycrystalline silicon active layer, the polycrystalline silicon active layer being doped with a dopant of the first dopant layer in the second region and doped with a dopant of the second dopant layer in the first region during the step of crystallizing the amorphous silicon layer.

Polycrystalline silicon thin film transistor and method of fabricating the same, and display apparatus

A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.

Thin film transistor, method for fabricating the same, array substrate, and display device

The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a gate electrode on a base substrate; forming a gate insulation layer with an even surface; forming a pattern of a polysilicon semiconductor layer; and forming patterns of a source electrode and a drain electrode. The step of forming the pattern of the polysilicon semiconductor layer includes: crystallizing the amorphous silicon layer, so as to form the polysilicon semiconductor layer.

Thin film transistor, method for manufacturing the same, array substrate, and display device

A packaging method, a display panel, and a display apparatus. The packaging method comprises steps of: forming a frit layer in a packaging area of a first substrate; forming at least a metal thin film and/or at least a silicon thin film on the frit layer formed on the first substrate, and forming at least a metal thin film and/or at least a silicon thin film in a packaging area of a second substrate, wherein one of the outermost thin film formed on the frit layer and the outermost thin film formed is a metal thin film, and the other is a silicon thin film; and vacuum laminating the first substrate and the second substrate, without the use of a laser to irradiate the frit layer during the packaging.

Growing community of inventors

Beijing, China

Zhengyin Xu