University of Minnesota

Zhengyang Zhao

Jian-Ping Wang

Mahdi Jamali

Sachin S Sapatnekar

Angeline Klemm Smith

Thomas Peterson

Ulya R Karpuzcu

Hyung-il Kim

Mahendra Dc

Masoud Zabihi

Meghna G Mankalale

Michael Salonik Resch

Zhaoxin Liang

Zamshed I Chowdhury

A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.

Computational random access memory (CRAM) based on spin-orbit torque devices

An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

Spin hall effect magnetic structures

In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.

Fast magnetoelectric device based on current-driven domain wall propagation

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Minneapolis, MN, United States of America

Zhengyang Zhao