Beijing Naura Microelectronics Equipment Co., Ltd.

Telefonaktiebolaget Lm Ericsson (publ)

St-ericsson Semiconductor (beijing) Co., Ltd

Zhenguo Ma

Xin Wu

Chun Long Wang

Bo Zheng

Jing Shi

Xiaojuan Wang

Jing Wang

Peng Liu

Jun Zhang

Huaisong Zhu

Chen Liu

Jing Yan Ma

Pei Li

Chunhui Liu

Yipeng Zhang

Henan Zhang

Peijun Ding

Jing Ma

Lihui Wen

Yunlong Hu

Fuping Chu

Jiangshan Chen

Liyong Yin

Yiliang Chen

An etching method for selectively etching a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate.

Etching method, air-gap dielectric layer, and dynamic random-access memory

Various embodiments of the present disclosure provide a method for multi-user multi-antenna transmission. The method which may be performed by a network node comprises calculating parameters for multi-user multi-antenna transmission, according to measurement information reported by a first set of terminal devices. The method further comprises selecting, from the first set of terminal devices, a second set of terminal devices to which the multi-user multi-antenna transmission is to be applied, based at least in part on performance gain estimated according to the parameters for multi-user multi-antenna transmission.

Method and apparatus for multi-user multi-antenna transmission

Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Reaction gas supply system and control method thereof

Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Gas phase etching device and gas phase etching apparatus

A semiconductor manufacturing process is provided. A trench is formed in a semiconductor structure and an oxide layer is deposited on sidewalls of the trench. A solid-state by-product layer is formed on surfaces of the trench by introducing a first etchant gas to react with a naturally occurred oxide layer at the bottom of the trench and the deposited oxide layer. The solid-state by-product layer has a thickness on the bottom less than a thickness on the sidewalls. A second etchant gas is introduced into the trench to react with the solid-state by-product layer, thereby providing a thinned solid-state by-product layer on the sidewalls to protect the deposited oxide layer. By a heating process, the thinned solid-state by-product layer is removed from the sidewalls of the trench, exposing the deposited oxide layer and a surface portion of the semiconductor structure in the trench.

Semiconductor manufacturing process

A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.

Method for removing silicon oxide and integrated circuit manufacturing process

A paging decoding method in a wireless communication device adapted to operate in association with a primary cell provided by a network node of a cellular communication system, wherein the primary cell has one or more neighboring cells is disclosed. The method comprises receiving a paging signal during a paging occasion, temporarily storing the received paging signal, attempting to decode the received paging signal based on one or more parameters of the primary cell, and (if decoding of the received paging signal based on one or more parameters of the primary cell is un-successful) attempting to decode the temporarily stored received paging signal based on parameters of one of the neighboring cells. In some embodiments, the method may further comprise selecting the one of the neighboring cells based on one or more of respective received signal strengths of the neighboring cells and respective received signal powers of the neighboring cells after receiving the paging signal during the paging occasion. Corresponding computer program product, arrangement and wireless communication device are also disclosed.

Paging decoding

The present invention provides a method and an apparatus for eliminating direct current offset. The method comprises the steps of: calculating Euclidean distances between every two demodulation symbols of a plurality of demodulation symbols based on Quadrature Phase Shift Keying (QPSK) modulation; determining four sets from the plurality of demodulation symbols in accordance with the Euclidean distances between the demodulation symbols, each set corresponding to a modulation direction for the QPSK modulation; performing Euclidean distance weighted summation on the determined four sets respectively, and selecting a demodulation symbol with the minimum weighted summation value from each set as a rough estimation point for the QPSK modulation, so as to obtain four rough estimation points; re-determining four sets from the plurality of demodulation symbols in accordance with the Euclidean distances between the demodulation symbols and the rough estimation points; performing Euclidean distance weighted summation on the re-determined four sets respectively, and selecting a demodulation symbol with the minimum weighted summation value from each set as a precise estimation point; and performing direct current offset calculation and compensation in accordance with the precise estimation points. The present invention can improve the demodulation performance of a system.

Method and apparatus for eliminating direct current offset

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Beijing, China

Zhenguo Ma