Globalfoundries Inc.

University of Pennsylvania

Zhengqing John Qi

Alan T Johnson

Rajatesh R Gudibande

Jed Hickory Rankin

Ruilong Xie

Guoxiang Ning

Lei Sun

Wenhui Wang

Daniel James Dechene

Yulu Chen

Erik A Verduijn

Christina Turley

The present invention provides methods for fabricating graphene workpieces. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.

Scalable, printable, patterned sheet of high mobility graphene on flexible substrates

Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

Dummy assist features for pattern support

The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

Extreme ultraviolet lithography photomasks

Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.

Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure

Growing community of inventors

Albany, NY, United States of America

Zhengqing John Qi