Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Mianyang Boe Optoelectronics Technology Co., Ltd.

Beijing Strong Biotechnologies, Inc.

Zhengping Xiong

Wei Guo

Yao Liu

Zuqiang Wang

Qinglin Ma

Won Seok Kim

Shuaimin Jian

Xi Liu

Yongan Feng

Pohsuan Chiang

A creatine kinase isoenzyme latex-enhanced immunoturbidimetric assay kit, comprising a first reagent and a second reagent. The first reagent comprises a buffer solution, an electrolyte, polyethylene glycol, a surfactant, a preservative, a blocking agent, and a protective agent. The second reagent comprises a buffer solution, polystyrene latex particles coated with a creatine kinase isoenzyme antibody, the creatine kinase isoenzyme antibody on the latex particles, a protective agent, a stabilizer, and a preservative.

Creatine kinase isoenzyme assay kit

The present disclosure provides a display substrate, a display device, and a manufacturing method of a display substrate. The display substrate of the present disclosure includes a substrate, a pixel defining layer located on the substrate, and a plurality of organic light emitting diodes arranged in an array, with a plurality of pixel accommodating holes provided in the pixel defining layer, and the organic light emitting diodes in one-to-one correspondence with the pixel accommodating holes, and located in the corresponding pixel accommodating holes; and a plurality of supporting structures in one-to-one correspondence with the pixel accommodating holes are formed on a side of the pixel defining layer distal to the substrate, and orthographic projections of the supporting structures on the pixel defining layer surround the corresponding pixel accommodating holes.

Display substrate, display device, and manufacturing method of display substrate

Embodiments of the invention provide an oxide TFT and a manufacturing method thereof. The oxide thin film transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulation layer covering the gate electrode; an oxide active layer formed on the gate insulation layer and comprising a source region, a drain region, and a channel between the source region and the drain region; an etching barrier layer entirely covering the active layer and the gate insulation layer; and a source electrode and a drain electrode formed on the etching barrier layer and respectively provided on both sides of the channel. The etching barrier layer is a metal layer. The oxide thin film transistor further comprises a channel protective layer, which is a non-conductive oxidation layer converted from the metal layer by performing an oxidation treatment on the metal layer.

Oxide TFT and manufacturing method thereof

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Beijing, China

Zhengping Xiong