Tsinghua University

Zhengming Zhao

Liqiang Yuan

Tian Tan

Boyang Li

Kainan Chen

Bochen Shi

Chen Wang

Ye Jiang

Zhujun Yu

Yicheng Zhu

Jianning Sun

Yatao Ling

Qing Gu

A discrete state event-driven (DSED) simulation method for simulation of a power electronic system is disclosed. With respect to continuous states and discrete events in the power electronic system, the method includes: numerical integration of the continuous states with a flexible adaptive (FA) algorithm having both variable step-size and variable order; and location of the discrete events with an event-driven (ED) mechanism, in which active events are picked out and pre-scheduled before their occurrence while passive events are located by iterative search. The proposed to DSED simulation method can achieve significant improvement in simulation efficiency, with remarkably reduced computational costs at the same level of numerical accuracy. The proposed DSED simulation method is particularly applicable for complex power electronic systems with modular combined topology and high switching frequency.

Discrete state event-driven simulation method for simulation of power electronic system

An electrical energy router includes cascaded submodules. Each submodule of the cascaded submodules includes a rectifying stage and an isolating stage. The rectifying stage includes a structure of a neutral point clamped full bridge. The isolating stage includes a DC-DC converter, which includes a primary side, a secondary side and a transformer. The primary side includes a structure of a neutral point clamped half bridge. A DC side of the neutral point clamped half bridge is connected to a DC bus line of the rectifying stage.

Electrical energy router and electrical energy router submodule

An IGBT modeling method includes creating piece-wise line functions describing a collector-emitter voltage v, a collector current iand a gate-emitter voltage vof the IGBT during a switching-on transient based on an internal structure of the IGBT and transient processes of the IGBT. The IGBT modeling method further includes creating piece-wise line functions describing the collector-emitter voltage v, the collector current iand the gate-emitter voltage vof the IGBT during a switching-off transient based on the internal structure of the IGBT and the transient processes.

IGBT modeling method and circuit simulation method

A backward discrete state event driven power electronics simulation method includes simulation initialization and a k-th simulation step, k&#x2265;0. The k-th simulation step includes obtaining a system state equation at the k-th step. The k-th simulation step further includes determining alternative quantized values for each of state variables at a k+1-th step. The k-th simulation step further includes setting up a finite state machine to determine quantized values for the state variables at the k+1-th step one by one. The k-th simulation step further includes calculating a vector of derivatives based on the quantized values at the k+1-th step and the system state equation. The k-th simulation further includes determining the time of the k+1-th simulation step based on occurrence times of events.

Backward discrete state event driven power electronics simulation method, power electronics simulation computation apparatus and computer-readable storage medium

Growing community of inventors

Beijing, China

Zhengming Zhao