William Marsh Rice University

Nanyang Technological University

Zheng Liu

Pulickel Madhavapanicker Ajayan

Qijie Wang

Jun Lou

Xuechao Yu

Sina Najmaei

Peng Yu

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

Chalcogenide film including a noble metal chalcogenide material, device including the chalcogenide film, and method of forming the chalcogenide film

In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.

Growth methods for controlled large-area fabrication of high-quality graphene analogs

Growing community of inventors

Singapore, Singapore

Zheng Liu