Changxin Memory Technologies, Inc.

University of Science and Technology Beijing

China Coal No.3 Construction Corporation (group) Ltd

Hefei Design & Research Institute of Coal Industry Co., Ltd

Ansteel Group Mining Corporation Limited

Zheng Li

Ning Liu

Fei Ma

Bin Xu

Yong Zhang

Guang Li

Tingting Bao

Guozheng Zhou

Donghui Man

Renshu Yang

Lin Lv

Jinghui Ye

Huidong Xu

Bo Ding

Yingcan Liu

A full-face shaft tunnel boring machine system includes a tunnel boring machine cutterhead device for tunneling downwards in a shaft; a full-hydraulic formwork device for supporting and walling in a wellbore; and an upper muck-discharge system for vertically conveying rock mucks generated by tunneling. The tunnel boring machine cutterhead device comprises a vertical guide frame, a cutter-expanded boring head and an advanced cutterhead that are fixedly connected in a vertical order from top to bottom so as to form an integrated structure. The vertical guide frame is a hollow cylindrical structure and driven to rotate around an axis of the vertical guide frame by a power mechanism, and an outer wall of the vertical guide frame is provided with multiple sets of first guide rollers.

Full-face shaft tunnel boring machine system

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

Method and device for measuring dimension of semiconductor structure

Growing community of inventors

Hefei, China

Zheng Li