Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Zheng Han

Vincent Bouchiat

Thomas Alava

Johann Coraux

Thomas Ernst

A method for regulating, with a computer, a resistive element arranged to deice and/or demist a support, the method including: a) a loop for monitoring the temperature T and the moisture level H at the support; b) a deicing and/or demisting sequence which, as long as the temperature T and the moisture level H monitored by the monitoring loop a) are indicative of an absence of frost or mist on the support, keeps the resistive element inactive and, in the contrary case, demands, in a step b2), the circulation of a current I in the resistive element so that the latter dissipates a thermal power P, adjusted according to the temperature T and the moisture level H, and providing deicing or demisting of the support over a predetermined period D.

Method for regulating a resistive element intended for deicing and/or demisting a support, and the associated device

Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (), a molding block (), forming, on the molding block, a thin layer () made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion () of the thin layer extending against a lateral face of the molding block, said retained portion () forming a fin that is capable of forming a channel structure of the transistor,

Field effect transistor with an atomically thin channel

The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Growing community of inventors

Grenoble, France

Zheng Han