United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Zheng-Feng Chen

En-Chiuan Liou

Yi-Ting Chen

Sho-Shen Lee

Hsiao-Lin Hsu

Lu-Wei Kuo

A method of forming an overlay mark structure includes the following steps. An insulation layer is formed on a substrate. A first overlay mark is formed in the insulation layer. A metal layer is formed on the substrate. The metal layer covers the insulation layer and the first overlay mark. The metal layer on the first overlay mark is removed. A top surface of the first overlay mark is lower than a top surface of the insulation layer after the step of removing the metal layer on the first overlay mark. A second overlay mark is formed on the metal layer. In the method of forming the overlay mark structure, the first overlay mark may not be covered by the metal layer for avoiding influences on related measurements, and the second overlay mark may be formed on the metal layer for avoiding related defects generated by the height difference.

Growing community of inventors

Taipei, Taiwan

Zheng-Feng Chen