Xiamen Sanan Optoelectronics Technology Co., Ltd.

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Zhenduan Lin

Junpeng Shi

Chen-Ke Hsu

Chih-Wei Chao

Senpeng Huang

Pei-Song Cai

Hao Huang

Chen-ke Hsu

Yanqiu Liao

Zhaowu Huang

Chang-Chin Yu

Weng-Tack Wong

Qiuxia Lin

Shunyi Chen

Chenjie Liao

A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

LED device and light emitting apparatus including the same

The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λ) is the maximum light intensity within 380-780 nm, S(λ) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λ)−S(λ)/S(λ), −0.15<D(λ)<0.15.

White light LED package structure and white light source system

The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(&#x3bb;), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(&#x3bb;), P(&#x3bb;) is the maximum light intensity within 380-780 nm, S(&#x3bb;) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(&#x3bb;) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(&#x3bb;)=P(&#x3bb;)/P(&#x3bb;)&#x2212;S(W)/S(&#x3bb;), &#x2212;0.15&#x3c;D(&#x3bb;)&#x3c;0.15.

A light-emitting diode (LED) package structure includes: a support; an LED chip; and a package cover, wherein: a support circuit is formed over the support; the LED chip is arranged over the support and electrically coupled to the support circuit; a lower surface periphery of the package cover is provided with a groove structure filled with organic binder; and the package cover is arranged over the LED chip and connected to the support via the organic binder.

Ultraviolet light emitting diode and manufacturing method thereof

A light-emitting device includes a base having an insulating part and a metal block; a light-emitting diode (LED) chip over the base; a water soluble paste between the LED chip and the base metal block for chip fixing and heat conduction; packaging glue covering the LED chip; and the LED chip bottom, water soluble paste and the base metal block form an all-metal thermal conducting path to achieve low a thermal resistance.

Light-emitting device

A light emitting diode package structure allows for an improved light-emitting efficiency by including a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; and a second reflecting material layer surrounding the first transparent material layer. An interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip. A wavelength conversion material layer is over the first reflecting material layer, the flip chip, and the second reflecting material layer.

Light emitting diode package structure and fabrication method

Light-emitting diode package

Package for light-emitting diode

Growing community of inventors

Xiamen, China

Zhenduan Lin