Xiamen Changelight Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd.

Zhendong Wei

Junxian Li

Yingce Liu

Xingen Wu

Hongyi Zhou

Zhiwei Lin

Kaixuan Chen

Qilong Wu

Zhao Liu

Xinmao Huang

Wei Jiang

Xiangjing Zhuo

Tianzu Fang

Yang Wang

Yong Zhang

Xuan Huang

Chunhsien Lee

Qihua Liao

Liang Chen

Bin Song

Lihe Cai

Qimeng Lv

Yongtong Li

Qimeng Lyu

Gengcheng Li

Xiaoping Li

Hexun Cai

Zhiying Zheng

A light-emitting device includes a light-emitting laminated structure, an electrode structure that is disposed on the light-emitting laminated structure, an insulation layer that is disposed on the light-emitting laminated structure, and a blocking layer structure that is interposed between the electrode structure and the insulation layer. The light-emitting laminated structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer that is interposed between the first type semiconductor layer and the second type semiconductor layer and is configured to emit light. The blocking layer structure has a first section and a second section that forms a continuous structure with the first section. The first section is interposed between a side wall of the electrode structure and the insulation layer, and the second section is interposed between the insulation layer and the light-emitting laminated structure.

Light-emitting device

A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.

High voltage light-emitting diode and method of producing the same

A light-emitting diode (LED) chip () comprises a substrate (), an epitaxial structure (), a transparent conductive layer (), a passivation protective layer (), and at least one electrode (). The epitaxial structure () is disposed on the substrate (). The transparent conductive layer () is disposed on the epitaxial structure (). The transparent conductive layer () defines one or more first through holes () that extend through the transparent conductive layer (). The passivation protective layer () is disposed on the transparent conductive layer (). The passivation protective layer () defines one or more second through holes () that extend through the passivation protective layer (). The electrode () is disposed on the passivation protective layer (). The electrode () electrically connects the transparent conductive layer () through the one or more second through holes ().

Light-emitting diode chip and method of manufacturing the same

A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel. The N-type electrode extends to the first extended electrode portion through the third channel and the P-type electrode extends to the second extended electrode portion through the fourth channel.

Flip light emitting chip and manufacturing method thereof

A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

Semiconductor light emitting chip and its manufacturing method

A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.

Semiconductor chip of light emitting diode and manufacturing method thereof

A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.

Light emitting diode (LED) chip and manufacturing method and light emitting method thereof

According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.

Light-emitting diode chips with enhanced brightness

Growing community of inventors

Xiamen, China

Zhendong Wei