Applied Materials, Inc.

Apple Inc.

Zhenbin Ge

Mei Yin Chang

Chien-Teh Kao

Alan A Ritchie

Adolph Miller Allen

Xinliang Lu

Vivek G Gupta

Ligang Wang

Joel M Huston

Ryan Hanson

Nitin K Ingle

Muhammad M Rasheed

Kirankumar Neelasandra Savandaiah

Tza-Jing Gung

Sunggu Kang

Xianwei Zhao

Wookyung Bae

John Z Zhong

Srinivas Gandikota

Victor H Yin

Jun Qi

John C Forster

Xianmin Tang

Rongjun Wang

Zheng Yuan

Lara Hawrylchak

Michael Santiago Cox

Tong Chen

Hyungryul J Choi

Yi Zheng

Rong Liu

Moshe Kriman

William R Johanson

David T Or

Goichi Yoshidome

Neil MacKinnon

Vikash Banthia

Wenyong Zhu

Jing Tang

Donny Young

Tingjun Xu

Miodrag Scepanovic

Yazan Z Alnahhas

Gregory A Cohoon

Francesco Aieta

Mookyung Son

Mohammad Kamruzzaman Chowdhury

Haichun Yang

Jeffrey Nathan Gleason

Colleen F Mischke

Nan Lu

Daming Xu

Zhendong Liu

Adar Magen

Ziruo Hong

Yifei Wang

Yoshitaka Matsui

Avery P Yuen

Calvin Kyaw Wong

Eamon Han O'Connor

Hoiman Raymond Hung

Zhigang Xie

William H McClintock

Wei Lv

Jun Xie

Christopher Hu

Runyu Zhang

Wei He

Daryl I Vulis

Stephen C Cool

Pee Khiam So

Linsen Bie

Jenn Yue Wang

Sally Lou

Xiaoyong Fu

Wencong Zhu

Brandon J Hui

Christian Ocier

Shang Wang

Zhujun Shi

Shigeto Kobori

Yukinori Asakawa

Ryan A Zimmerman

Po Hsun Chen

Arun Kumar Nallani Chakravartula

Fei Yan

An electronic device may have a display system. The display system may include a waveguide, an input coupler, and a surface relief grating (SRG) structure. There are various ways to form a SRG structure. In one example, nanoimprinting may be performed on a low-index resin to form a mold for a subsequent deposition of high-index material. The high-index material conforms to the mold to form ridges for the SRG structure. A reusable mold may be formed with a plurality of ridges on a flexible substrate and coated by an anti-stick coating. The reusable mold may be coated with a high-index material that is attached to a glass substrate and cured to form a wafer-level SRG structure with high-index ridges on a glass substrate. The wafer-level SRG structure is subsequently diced. SRG structures may also be formed that include varying trough thicknesses, varying ridge thicknesses, and/or a sloped substrate.

Methods of forming holographic gratings for optical systems

Configurations for a beam deflector metasurface are disclosed. The beam deflector metasurface may include beam deflectors arranged in a repeating, radial pattern of concentric zones. The beam deflector metasurface may be a large area, high numerical aperture metasurface optic with high efficiency when directing light at non-normal angles of incidence. The different concentric zones may direct received light in varying directions with various steepness of angles. The beam deflectors may include pillars that may be the same or different width, height, or shape. The pillars may function as diffractive gratings and the cross-coupling between the pillars may direct the output light. The zones of the beam deflector metasurface may allow for diffusing hot spots and spreading the light evenly over the target area. The beam deflector metasurface may be used for non-imaging applications where the deterioration of focus allows for better efficiency at non-normal input and output angles of incidence. The beam deflectors may be designed for polarization and wavelength sensitivity as well as allowing for multiple processing benefits such as patterning the beam deflectors onto active devices.

Beam deflector metasurface

A display may have a pixel array such as a liquid crystal pixel array. The pixel array may be illuminated with backlight illumination from a direct-lit backlight unit. The backlight unit may include an array of light-emitting diodes on a printed circuit board. The backlight unit may include first, second, and third light spreading layers formed over the array of light-emitting diodes. A color conversion layer may be formed over the first, second, and third light spreading layers. First and second brightness enhancement films may be formed over the color conversion layer.

Displays with direct-lit backlight units

Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.

Methods for reducing material overhang in a feature of a substrate

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

An optical module includes a diffractive optical element (DOE) with a transparent conductive trace disposed over a surface of the DOE. An emitter is configured to direct a beam of optical radiation through the DOE. Control circuitry is coupled to measure a resistance of the transparent conductive trace and to control operation of the emitter responsively to the resistance.

Light projector with integrated integrity sensor

An electronic device may have transparent members such as display cover layers and camera windows. A transparent member such as a sapphire member may be provided with an antireflection coating. The antireflection coating may have a stack of dielectric thin-film interference filter layers that form a thin-film interference filter that suppresses visible light reflections. The stack of dielectric thin-film interference filter layers may have thicknesses and materials that provide the thin-film interference filter and coating with low light reflection properties while enhancing scratch resistance. An adhesion layer may be used to help adhere the stack of thin-film interference filter layer to the transparent member. An antismudge coating such as a fluoropolymer coating may be used to reduce smudging. Graded layers and layers with elevated hardness values may be used in the coating.

Electronic devices having scratch-resistant antireflection coatings

A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Dual-direction chemical delivery system for ALD/CVD chambers

An electronic device may have an optical system that includes one or more light-based components. The light-based components may include light-emitting components such as light-emitting diodes or lasers and may include light-detecting components such as photodiodes or digital image sensors. The optical system may include a light diffuser. The light diffuser may diffuse light that is being detected by a light-detecting component or may diffuse light that is being emitted by a light-emitting component. Light diffusers in optical systems may be formed from patterned light diffuser layers on transparent substrates. Layers of sealant, thin glass layers, antireflection coatings, and other layers may be incorporated into the light diffusers. The light diffuser layers may operate at visible wavelengths and infrared wavelengths. An infrared light diffuser layer may be formed from a patterned silicon layer such as a patterned layer of hydrogenated amorphous silicon.

Electronic device with light diffuser

In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

Auto capacitance tuner current compensation to control one or more film properties through target life

Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.

RF power compensation to control film stress, density, resistivity, and/or uniformity through target life

Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

Process kit for deposition and etching

Target profile for a physical vapor deposition chamber target

Growing community of inventors

San Jose, CA, United States of America

Zhenbin Ge