International Business Machines Corporation

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Nxp B.v.

St-ericsson Sa

Versitech, Inc.

Shanghai Degao Industry Co., Ltd.

Shanghai Boiler Works Co., Ltd.

Zhen Xiang Yang

Shiwan Zhao

Yan Yan

Qining Li

Yi-Peng Chan

Sheng-He Huang

Xi Qing Wang

Hui Zhao

Peng Gao

Chao Li

Shaw-Ben Shi

Jing Zhou

Jie Xiong

Qiang Xie

Yue Yu

Barbara Pui Chan

Yipeng Chan

Yao Peng

Jianjun Ni

Nan Chen

Godfrey Chi-Fung Chan

Tang Ren Yao

Xiao Ye

Hoi Ling Wong

Guoxu Zhao

Shenghe Huang

Kijun Kim

Amanda Sun

Kaihua Zheng

Yongqian Huang

Mei Yi Wong

Yipeng Jan

A preparation method forextract includes the following steps: 1) Removing impurities from freshand/or freshbuds, cutting the freshand/or freshbuds into small sections for use as raw materials; 2) Placing a certain quantity of raw materials into a ultrasonic vessel, adding in a solvent having a mass ratio of 1:3 to 1:30 to form a mixture, uniformly stirring the mixture, and then adding in a certain amount of inorganic acid and/or organic acid to adjust the pH value to 1.3 to 3.0, then soaking the raw materials for 10 minutes to 30 minutes; 3) Performing ultrasonic treatment for 30 minutes to 60 minutes, controlling the ultrasonic frequency to be 20 KHz to 25 KHz, the ultrasonic power to be 1000 W to 2000 W, the ultrasonic temperature to be 15&#xb0; C. to 50&#xb0; C., then performing filtration, sterilization and detection to obtainextract.

Camellia extract, its preparation method, and its use

The present invention demonstrates a solid fuel grade gasification-combustion dual bed poly-generation system, comprising a combustion system, a gasification system, a synthesized gas cooling and purifying system and a synthesized gas methanation system. The combustion system is connected with the gasification system through a circulating material return system. The gasification system mainly adapts the circulating fluidized-bed combustion mode. The gasification system adapts the fluidized-bed incomplete gasification method and the generated semi-coke is returned to the combustion system for re-utilization. The synthesized gas purifying and cooling unit adapts water cycling and combustible recycling. The by-products, COand steam, in the methanation unit can be recovered, so the maximum utilization rate of energy in this system is realized.

Solid fuel grade gasification-combustion dual bed poly-generation system and method thereof

The method includes identifying, by one or more computer processors, at least one source rank selected for depopulation in a storage pool. The method further includes identifying, by one or more computer processors, one or more source extents for depopulation, wherein the identified one or more source extents belongs to the identified at least one source rank selected for depopulation. The method further includes obtaining, by one or more computer processors, for each identified source extent of the identified one or more source extents to be depopulated, at least one I/O workload. The method further includes sorting, by one or more computer processors, the one or more source extents to be depopulated, based at least in part on the at least one I/O workload for each identified source extent of the identified one or more source extents.

I/O statistic based depopulation of storage ranks

The invention relates to information processing field, and discloses a method for protecting sensitive information, comprising: determining that the sensitive information is required by a server; transmitting first information to a trusted device connected to the untrusted device, where the first information enables the sensitive information to be transmitted from the trusted device to the server, wherein the sensitive information is input on the trusted device; receiving second information transmitted by the trusted device, the second information is generated based on the first information and includes the sensitive information encrypted with a first secret key, wherein the first secret key meets one of the following: the untrusted device does not know the first secret key; the untrusted device knows the first secret key but is unable to use the first secret key to decrypt the encrypted sensitive information; forwarding the second information to the server.

Protecting sensitive information using an untrusted device

The invention relates to information processing field, and discloses a method for protecting sensitive information, comprising: receiving first information transmitted by an untrusted device, where the first information enables the sensitive information to be transmitted from a trusted device to a server; receiving the sensitive information input by a user; generating second information based on the first information and the sensitive information; encrypting at least the sensitive information in the second information with a first secret key, wherein the first secret key meets one of the following: the untrusted device does not know the first secret key; and the untrusted device knows the first secret key but is unable use the first secret key to decrypt the encrypted sensitive information; and transmitting the second information containing the encrypted sensitive information to the untrusted device for forwarding to the server indicated by the first information.

Protecting sensitive information using a trusted device

A method for setting voltages in a flash memory for high temperature operating life (HTOL) testing is provided. The flash memory includes a substrate, a source, and a control gate. The method includes adjusting the voltages that are applied to the source, the control gate, and the substrate, such that there is no voltage difference between the control gate and the source, and no voltage difference between the control gate and the substrate. Specifically, adjusting the voltages includes setting the voltage that is applied to the source to a ground voltage, setting the voltage that is applied to the control gate to the ground voltage, and setting the voltage that is applied to the substrate to a power supply voltage.

Method for setting a flash memory for HTOL testing

A voltage regulator circuit comprises an amplifier () having a first input coupled to a first reference voltage node; a power pass element () having a control terminal coupled to an output of the amplifier, an input coupled to a power supply input of the voltage regulator circuit, and an output coupled to an output of the voltage regulator circuit; a feedback circuit () having an input coupled to the output of the power pass element and an output coupled to a second input of the amplifier; and a compensation module () comprising a transistor (), wherein a gate or base terminal of the transistor is coupled to a second reference voltage node, a drain or collector terminal of the transistor is coupled to the output of the amplifier, and a source or emitter terminal of the transistor is coupled to the power supply input of the voltage regulator circuit. The voltage regulator circuit is capable to increase the power supply rejection ratio of low drop-out voltage regulators.

Voltage regulator circuit

A method is provided to functionally select cells with enhanced characteristics relevant to cell engraftment, including both spontaneous migration and directional migration towards specific chemo-attractants. The cells are preferably undifferentiated cells, such as mesenchymal stem cells. The method involves entrapping or encapsulating the cells in a biomaterial barrier, optionally inducing cell migration, and selecting cells that migrated through the barrier. The cells selected by this method have better migratory activities and enhanced in vivo engraftment to injured tissues when they are supplemented systemically.

Methods to enhance cell migration and engraftment

A voltage regulator is provided having one or more discharger circuits that compensate for low on-chip output capacitance and a slow loop response time. In one embodiment, the voltage regulator includes an output transistor coupled to an output voltage line, an output voltage sensing arrangement coupled to the output voltage line for producing an output feedback voltage, and an error amplifier coupled to the output feedback voltage, the output transistor, and a reference voltage for applying feedback control to the output transistor. A first discharger circuit is coupled to the output voltage line and to a reference potential, the first discharger circuit being triggered by a steep-rise overvoltage condition. In another embodiment, a combination of fast and slow discharger circuits is used to improve the load step response&#x2014;i.e., to stop the output voltage from jumping too high and to pull it back to stable value very quickly, such that the load circuits are protected.

Capless low drop-out voltage regulator having discharge circuit compensating for on-chip output capacitance and response time

A computer implemented method for accessing data begins with receipt of a data access request. In response to determining that the requested data needs to be acquired in real time from an original data source, the processor acquires and stores that data. In response to determining that the data cannot be acquired in real time from the data source, the processor acquires the data from a configuration management database in which the requested data was previously stored.

Data access method and configuration management database system

A method for manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) device includes providing a substrate and forming a gate oxide over the substrate. Also, the method includes providing a mask overlying the gate oxide layer, the mask defining a tunnel opening. The method additionally includes performing selective etching over the mask to form a tunnel oxide layer. The method includes forming a floating gate over the tunnel oxide layer and a selective gate over the gate oxide layer. The method includes angle doping a region of the substrate using the floating gate as a mask to obtain a first doped region. The method further includes forming a dielectric layer over the floating gate and a control gate over the dielectric layer. The method additionally includes angle doping a second region of the substrate using the selective gate as a mask to obtain a second doped region, wherein the first and second doped regions partially overlap.

System and method for EEPROM architecture

A semiconductor device includes a substrate and a first gate oxide layer overlying a first device region and a second device region in the substrate, a first gate in the first device region, and a second gate and a third gate in the second device region. The device also has a first dielectric layer with a first portion disposed on the first gate, a second portion disposed adjacent a sidewall of the first gate, and a third portion disposed over the third gate. An inter-gate oxide layer is disposed on the first gate and between the first portion and the second portion of the first dielectric layer. A fourth gate overlies the second gate oxide layer, the inter-gate oxide layer, and the first portion and the second portion of the first dielectric layer in the first device region. A fifth gate overlies the third portion of the first dielectric layer which is disposed over the third gate in the second device region.

Electrically programmable device with embedded EEPROM and method for making thereof

An electrically programmable device with embedded EEPROM and method for making thereof. The method includes providing a substrate including a first device region and a second device region, growing a first gate oxide layer in the first device region and the second device region, and forming a first diffusion region in the first device region and a second diffusion region and a third diffusion region in the second device region. Additionally, the method includes implanting a first plurality of ions to form a fourth diffusion region in the first device region and a fifth diffusion region in the second device region. The fourth diffusion region overlaps with the first diffusion region.

Growing community of inventors

Beijing, China

Zhen Xiang Yang