United Microelectronics Corp.

Zhen Wu

Nien-Ting Ho

Chih-Chiang Wu

YI-Fan Li

Shih-Min Chou

Ti-Bin Chen

Wen-Yen Huang

Chiu-Hsien Yeh

Chun-Lung Chen

Po-Wen Su

Hsuan-Hsu Chen

Chuan-Chang Wu

Yu-Ren Wang

Shui-Yen Lu

Chun-Wei Yu

Yu-Ying Lin

Hsiao-Pang Chou

Yi-Liang Ye

Sung-Yuan Tsai

Tai-Yen Lin

Jian-Wei Chen

Yu-Ting Tseng

Kuan-Ying Lai

Yen-Cheng Chang

A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Semiconductor device and method for fabricating the same

A method for a clean procedure during manufacturing a semiconductor device, includes: providing a patterned sacrificial gate structure including a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed; performing a first etching process to remove the sacrificial layer; and performing a hydrophilic treatment and a hydrophobic treatment to remove a residue of the sacrificial layer.

Method for clean procedure during manufacturing semiconductor device

A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconductor pattern and a first bottom protection pattern disposed between the first semiconductor pattern and the substrate. A first protection layer is formed on the first patterned structures and the substrate. A part of the first protection layer is located between the first patterned structures. A first opening is formed in the first protection layer between the first patterned structures. The first opening penetrates the first protection layer and exposes a part of the substrate. A first etching process is performed after forming the first opening. A part of the substrate under the first patterned structures is removed by the first etching process for suspending at least a part of each of the first patterned structures above the substrate.

Semiconductor device

A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.

Semiconductor device and manufacturing method thereof

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

Method for fabricating semiconductor device

A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.

Method of forming semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first organic layer on the substrate; patterning the first organic layer to form an opening; forming a second organic layer in the opening; and removing the first organic layer to form a patterned second organic layer on the substrate.

A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

Semiconductor device and method of forming the same

A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.

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Kaohsiung, Taiwan

Zhen Wu