National Institute of Information and Communications Technology, Incorporated

Nec Corporation

Communications Research Laboratory Independent Administrative Institute

Zhen Wang

Atsushi Saito

Akira Kawakami

Hisashi Shimakage

Hiroshi Imai

Yuzo Senda

Jun Takada

Gaku Nakano

Masahiko Ohta

Atsushi Hatabu

Yoshinori Uzawa

For detecting a crack formed on a structure surface without erroneously, an information processing device that detects a crack on a structure, includes a change detection unit that detects a change in positions of at least two measurement points on the structure; and a crack detection unit that detects a crack based on the change in the positions of the measurement points detected by the change detection unit.

Information processing device, information processing method and medium

It is an object to provide a tuning circuit which has large fractional frequency band width, for example frequency band of the return loss of less than &#x2212;10 dB. The tuning circuit is composed of a superconductor microstrip lines, a superconductor distributed tunnel junction elements, a signal input part and a signal output part. It comprises at least a superconductor microstrip line and at least two superconductor tunnel junction elements, wherein the microstrip line and the tunnel junction element are connected alternately. The microstrip line and the tunnel junction element are half-wavelength of an input signal at a center frequency. A quarter-wavelength impedance transformer is comprised between a signal input part and a half-wavelength tunnel junction which is nearest to the signal input part.

Tuning circuit with distributed tunnel junction elements and superconductor integrated circuit comprising the tuning circuit

A method includes forming an as-grown film of a superconductor composed of a MgBcompound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.

Method of forming a superconductor film

The present invention provides methods forming the superconductor of as-grown film of MgB which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB is unnecessary.

Growing community of inventors

Tokyo, Japan

Zhen Wang