Micron Technology Incorporated

Shanghai Huali Microelectronics Corporation

Zhen Gu

Haoyu Chen

Zhi Tian

Liping Xu

Xu Zhang

Xing Wang

Hua Shao

Qiwei Wang

Qingyuan Wang

Methods, systems, and devices for a sorted change log for physical page table compression are described. A mapping between a logical address and a physical address may be stored in a change log buffer. The mapping may be stored at a location of the change log buffer based on the logical address of the mapping relative to logical addresses of other mappings stored in the change log buffer. Based on storing mappings in the change log buffer based on logical addresses of the mappings, a set of mappings in the change log may include a set of sequentially-indexed logical addresses. A compressed entry for a logical-to-physical table may be generated based on the set of mappings.

Sorted change log for physical page table compression

Methods, systems, and devices for memory management procedures for write boost mode are described. A memory system may receive a command to write data. The memory system may write the data to a first location of the memory system using a first mode for storing one bit per memory cell based on receiving the command. The memory system may select a first portion of the data to rewrite to the memory system using a second mode for storing two or more bits per memory cell based on one or more parameters satisfying one or more thresholds. The memory system may write the first portion of the data to a second location of the memory system using the second mode based on selecting the first portion of the data. The memory system may maintain a second portion of the data at the first location of the memory system.

Memory management procedures for write boost mode

Methods, systems, and devices for validity mapping techniques are described. A memory device may use a change log to update a mapping that indicates whether data stored at respective physical addresses is valid. For example, the memory device may receive a command associated with data having a corresponding set of addresses (whether logical block addresses or physical addresses). The memory device may set an entry of the change log based on whether the set of addresses are consecutive. For example, the memory device may identify whether the set of addresses are consecutive and may set a flag in the entry of the change log to indicate whether the addresses are consecutive. Then, the memory device may update one or more entries of the mapping corresponding to the entry of the change log to indicate whether the addresses corresponding to the one or more entries of the mapping store valid data.

Validity mapping techniques

Methods, systems, and devices for logical-to-physical (L2P) mapping compression techniques are described. A memory system may use an L2P mapping to map logical addresses to physical addresses of the memory system. The L2P mapping may be a hierarchical L2P mapping divided into multiple levels or subsets that are used to identify a physical address corresponding to a logical address. The memory system may write data to a set of physical addresses that are consecutively indexed and may set a flag in an entry of a second-level of the L2P mapping (e.g., of a three-level L2P mapping) to indicate that the entry is associated with a starting physical address of the consecutively indexed physical addresses. The memory system may subsequently read the data starting at the starting physical address based on the flag (e.g., bypassing reading an entry of a lowest-level of the L2P mapping to determine the physical address).

Logical-to-physical mapping compression techniques

The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

Global shutter CMOS image sensor and method for making the same

The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.

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Shanghai, China

Zhen Gu