Applied Materials, Inc.

Zhelin Sun

Ning Li

Li-Qun Xia

Mark Joseph Saly

Mihaela A Balseanu

Bhaskar Jyoti Bhuyan

Yijun Liu

Lin Yang

Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

Methods and apparatus for deposition of low-k films

Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

Method and apparatus for deposition of low-k films

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Santa Clara, CA, United States of America

Zhelin Sun