Imec Vzw

Universiteit Gent

Imec

Zhechao Wang

Joris Van Campenhout

Dries Van Thourhout

Maria Ioanna Pantouvaki

Marianna Pantouvaki

The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

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Tournai, Belgium

Zhechao Wang