Massachusetts Institute of Technology

Fsi International, Inc.

Zhe Zhang

Herbert H Sawin

Jeffery W Butterbaugh

Andrew Scott Lawing

Han Xu

Jane P Chang

Yong-Pil Han

A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

Vapor phase cleaning of alkali and alkaline earth metals

Metals removal process

Growing community of inventors

Irvine, CA, United States of America

Zhe Zhang