Goertek Inc.

Institute of Microelectronics

United Microelectronics Corp.

National University of Singapore

Knowles Electronics, Inc.

Beihang University

Weifang Goertek Microelectronics Co., Ltd.

Shandong Gettop Acoustic Co., Ltd.

Nanomaterials Technology Pte Ltd

Zhe Wang

Quanbo Zou

Xiaoyang Zhang

Qinglin Song

Hanhua Feng

Qingxin Zhang

Peixuan Chen

Xiangxu Feng

Qunwen Leng

Jifang Tao

Lu Zou

Jialiang Yan

Uppili Sridhar

Ching Hwa Tey

Debo Sun

Mengjin Cai

Pang Dow Foo

Jian Chen

Yong Ping Xu

Zhigang Shen

Yubo Miao

Jiyao Zhang

Xianbin Wang

Guanxun Qiu

Yongwei Dong

Lianjun Liu

Jun Li

Jimmy Sung Lai Yun

Tao Gan

Shengli Pang

Wenhao Chen

Yujing Lin

Wai Hoong Sun

Xiaofeng Wang

Manen Lu

Sean Ian Saxon Liw

Rong Ming Lin

Mong King Lim

You Wang

Fanghui Gu

Jun Hu

Nital Arvind Jugade

Lingyan Gao

William Glover

The invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a gate structure on the substrate, respectively forming an epitaxial layer on both sides of the gate structure, and performing a pre-amorphization doping step on the substrate. After the pre-amorphization doping step, a defect is generated in the epitaxial layer, an outer spacer is formed beside the gate structure, and a chemical cleaning step is performed to remove a part of the epitaxial layer, and the defect in the epitaxial layer is removed.

Method for forming semiconductor structure

Disclosed are a method for manufacturing a coil, a coil, and an electronic device. The method includes: bonding a first side of a metal sheet onto a laser-transmitting substrate by an adhesive layer; cutting a coil pattern on a second side of the metal sheet by the laser to form a coil running through the two sides of the metal sheet on the metal sheet; bonding the second side of the metal sheet onto an adhesive tape; transmitting the laser through the laser-transmitting substrate to act on the adhesive layer to detach the laser-transmitting substrate and the adhesive layer from the first side of the metal sheet; exposing the coil pattern on the first side of the metal sheet; and forming an encapsulation layer on the coil to encapsulate the first side of the coil.

Method for manufacturing coil, coil and electronic device

The present disclosure discloses a microphone, comprising: a first substrate, the first substrate having an inner cavity open at one end, wherein the microphone further comprises a vibration diaphragm and at least one cantilever which are provided to the first substrate and suspended above the inner cavity. The cantilever is separated from the vibration diaphragm by a spacing portion, and the vibration diaphragm and the inner cavity of the first substrate define an acoustically sealed cavity; and a detection structure is provided to the vibration diaphragm and the cantilever. The structural design of the cantilever is adopted, so that the space between the vibration diaphragm and the cantilever is open, the airflow can smoothly pass by the cantilever, and further the signal-to-noise ratio of the microphone can be greatly improved.

Microphone

A micro-speaker, the manufacturing method thereof, a speaker device and an electronic apparatus are described herein. The micro-speaker comprises a case, wherein the case has an opening; and a piezoelectric layer, wherein one or more electrodes are provided on the piezoelectric layer, and wherein the piezoelectric layer is pre-buckled in its rest position, wherein the piezoelectric layer covers the opening and is bonded onto the case, to form a speaker rear cavity together with the case. The micro-speaker of the present invention has a relatively low speaker profile.

Micro-speaker, speaker device and electronic apparatus

The present invention discloses a MEMS device and an electronics apparatus. The MEMS device comprises: a substrate; a MEMS element placed on the substrate; a cover encapsulating the MEMS element together with the substrate; and a port for the MEMS element to access outside, wherein the port is provided with a filter which has mesh holes and includes electrets to prevent particles from entering into the MEMS element.

MEMS device and electronics apparatus

The present disclosure provides a laser projection device and a laser projection system. The laser projection device includes a light source scanner and a MEMS scanning mirror, the light source scanner including micro laser diodes; and the micro laser diodes are used to provide laser beams needed for image projection, and the laser beams are projected to the MEMS scanning mirror, and then reflected by the MEMS scanning mirror to a predetermined area to form a projection image. By providing the micro laser diodes in the laser projection device and initiatively emitting laser by exciting the micro laser diodes, the present disclosure does not need an external laser source and facilitates the reduction of the size of the laser projection device, as compared with the prior art.

Laser projection device and laser projection system

A MEMS microphone, comprising a packaging structure that is enveloped by a PCB substrate () and a housing (), wherein the packaging structure is provided with a MEMS acoustoelectric chip () therein, and the PCB substrate () is provided with a sound port () at a position that is corresponding to the MEMS acoustoelectric chip (), wherein, the MEMS microphone further comprises a filter (), wherein the filter () is embedded into a back cavity of the MEMS acoustoelectric chip (), the filter () and the PCB substrate () have a lateral hole therebetween, and the lateral hole serves as a sound channel that is used by the MEMS acoustoelectric chip () to gather sound. The MEMS microphone can prevent gas shock, block the interfering to the MEMS microphone by kinetic particles, keep the acoustic performance of the MEMS microphone, and reduce the packaging size of the MEMS microphone.

MEMS microphone

An MEMS microphone is provided, comprising a first substrate and a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate, wherein: one of the vibration diaphragm and the first substrate is provided with a magnetic film, and the other one of the vibration diaphragm and the first substrate is provided with a magnetoresistive sensor cooperating with the magnetic film, the magnetoresistive sensor being configured to sense a change in a magnetic field of the magnetic film during a vibration of the vibration diaphragm and output a varying electrical signal.

A micro laser diode projector comprises: an MEMS scanning device, which rotates around a first axis and a second axis that are orthogonal to each other; and a micro laser diode light source including at least one micro laser diode, wherein the micro laser diode light source is mounted on the MEMS scanning device and rotates around the first and second axes with the MEMS scanning device to project light to a projection screen. An electronics apparatus including the micro laser diode projector is also discussed.

Micro laser diode projector and electronics apparatus

A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array on a first substrate onto a receiving substrate through micro-bumps, wherein the first substrate is laser transparent; applying underfill into a gap between the first substrate and the receiving substrate; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate; and removing the underfill.

Micro-LED array transfer method, manufacturing method and display device

A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer () on a receiving substrate (), wherein first type electrodes () are connected to the bonding layer (); bringing a first side of the micro laser diodes () on a carrier substrate () into contact with the bonding layer (), wherein the carrier substrate () is laser-transparent; and irradiating selected micro laser diodes () with laser from the side of the carrier substrate () to lift-off the selected micro laser diodes () from the carrier substrate (). This method may improve yield.

Micro laser diode transfer method and manufacturing method

A display device and an electronics apparatus, the display device comprises: a display substrate; and at least two stacked layers on the display substrate, wherein each stacked layer includes one micro-LED array.

Display device and electronics apparatus

The present disclosure provides a laser projection device and a laser projection system. The laser projection device comprises an optical fiber scanner and a MEMS scanning mirror; an optical fiber is disposed on the optical fiber scanner and the optical fiber is used to deliver laser beams needed by projection; the optical fiber scanner drives the optical fiber to scan in a first plane and enables the laser beam to project to the MEMS scanning mirror; and the MEMS scanning mirror makes scanning movement about a first axis and reflects the laser beam to a predetermined area to form a projection image; wherein the first axis is located in the first plane, or the first axis is parallel to the first plane. The present disclosure achieves laser projection by enabling the optical fiber scanner and the MEMS scanning mirror to scan simultaneously in different directions.

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs () on a laser-transparent original substrate (), providing an anisotropic conductive layer () on a receiving substrate (), bringing the micro-LEDs () into contact with the anisotropic conductive layer () on the receiving substrate (), irradiating the original substrate () with laser from the original substrate side to lift-off the micro-LEDs () from the original substrate (), and processing the anisotropic conductive layer (), to electrically connect the micro-LEDs () with the pads (') on the receiving substrate ().

Transferring method, manufacturing method, device and electronic apparatus of micro-LED

The present invention provides a method for manufacturing a fully wafer-level-packaged MEMS microphone and a microphone manufactured with the same, the method comprises: separately manufacturing a first packaging wafer, an MEMS microphone wafer and a second packaging wafer; performing wafer-to-wafer bonding for the three wafers to form a plurality of fully wafer-level-packaged MEMS microphone units; singulating the fully wafer-level-packaged MEMS microphone units to form a plurality of fully wafer-level-packaged MEMS microphones, which are fully packaged at wafer level and do not need any further process after die singulation. The method can improve cost-effectiveness, performance consistency, manufacturability, quality, scaling capability of the packaged MEMS microphone.

Fully wafer-level-packaged MEMS microphone and method for manufacturing the same

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Weifang, China

Zhe Wang