Intel Corporation

Zhe Chen

Zhichao Zhang

Srikant Nekkanty

Feifei Cheng

Pooya Tadayon

Sriram Srinivasan

Steven A Klein

Michael E Ryan

Ahmet C Durgun

A microelectronic socket structure and a method of forming the same. The socket structure comprises: a socket structure housing defining a cavity therein; and an interconnection structure including: a contact element disposed at least in part within the cavity, and configured to be electrically coupled to a corresponding microelectronic package, the contact element corresponding to one of a signal contact element or a ground contact element; and a conductive structure disposed at least in part within the cavity, electrically coupled to the contact element, and having an outer contour that is non-conformal with respect to an outer contour of the contact element.

Heterogenous socket contact for electrical and mechanical performance scaling in a microelectronic package

In an embodiment, a socket comprises a housing, where the housing is a dielectric material. In an embodiment, a shell passes through a thickness of the, where the shell is conductive. The socket may further comprise a plug within the shell, where the plug is a dielectric material, and where the plug has a bottom surface. In an embodiment, a pin passes through the thickness of the housing within an inner diameter of the shell, where the pin has a first portion with a first diameter and a second portion with a second diameter, and where the pin is conductive. In an embodiment, the socket further comprises a spring around the first portion of the pin, where a first end of the spring presses against the bottom surface, and where a second end of the spring presses against the second portion of the pin.

Coaxial transmission line SLI socket designs for 224GBS and beyond

Embodiments include assemblies. An assembly includes a substrate having a first interconnect and a second interconnect. The first interconnect has a first conductive pad and a second conductive pad, and the second interconnect has a third conductive pad and a fourth conductive pad. The assembly includes a socket over the substrate. The socket has a first pin, a second pin, and a base layer with a first pad and a second pad. The first and second pins are vertically over the respective first and second interconnects. The first pad is directly coupled to the first pin and fourth conductive pad, while the second pad is directly coupled to the second pin and second conductive pad. The first pad is positioned partially within a footprint of the third conductive pad, and the second pad is positioned partially within a footprint of the first conductive pad.

Differential crosstalk self-cancelation in stackable structures

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Chandler, AZ, United States of America

Zhe Chen