Acm Research (shanghai) Inc.

Acm Research, Inc.

Zhaowei Jia

Jian Wang

Hui Wang

Liangzhi Xie

Jun Wang

Xi Wang

Fuping Chen

Xiaoyan Zhang

Yinuo Jin

Xuejun Li

Fufa Chen

Junping Wu

Hongchao Yang

Yunwen Huang

Sunny Voha Nuch

Zhifeng Gao

Yue Ma

Chenhua Lu

Jun Wu

Meng Wu

Quan Cao

Dongfeng Xiao

Disclosed is a substrate processing method, which comprises the following steps: S: transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S: after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S: electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in a plating chamber, the present invention has advantages of preventing delamination between two metal layers and solving product recess abnormality.

Substrate processing method

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

Methods and apparatus for cleaning semiconductor wafers

Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, which comprising a plurality of electrodes, for forming electric fields on the surface of the wafer, an independent electric field is formed in a designated area, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, an independent electric field is formed in a designated area, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch is reduced. The present invention is more accurate and reliable, the electroplating efficiency is also increased.

Electroplating apparatus and electroplating method

A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

System for cleaning semiconductor wafers

A plating apparatus for depositing metal on a substrate, comprising a membrane frame (), a catholyte inlet pipe () and a center cap (). The membrane frame () has a center passage () which passes through the center of the membrane frame (). The catholyte inlet pipe () is connected to the center passage () of the membrane frame (). The center cap () is fixed at the center of the membrane frame () and covers over the center passage () of the membrane frame (). The top of the center cap () has a plurality of first holes (). The catholyte inlet pipe () supplies catholyte to the center cap () through the center passage () of the membrane frame (), and the catholyte is supplied to a center area of the substrate through the first holes () of the center cap ().

Plating apparatus

The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

Methods and apparatus for cleaning substrates

A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Method for cleaning semiconductor wafers

A method for effectively cleaning vias (), trenches () or recessed areas on a substrate () using an ultra/mega sonic device (), comprising: applying liquid () into a space between a substrate () and an ultra/mega sonic device (); setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside vias (), trenches () or recessed areas on the substrate () increasing to a first set value, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside the vias (), trenches () or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate () being cleaned.

A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned. Normally, if f=f, then Pis equal to zero or much less than P; if P=P, then fis higher than f; if the f&#x3c;f, then, Pcan be either equal or less than P.

Methods and system for cleaning semiconductor wafers

A plating chuck for holding a substrate during plating processes, wherein the substrate has a notch area () and a patterned region () adjacent to the notch area (). The plating chuck comprises a cover plate () configured to cover the notch area () of the substrate to shield the electric field at the notch area () when the substrate is being plated.

Plating chuck

A method for cleaning a semiconductor substrate without damaging its patterned structure via an ultra/mega sonic device comprises applying liquid into a space between the substrate and the sonic device; setting an ultra/mega sonic device power supply at a frequency fand power P; and at zero output before bubble cavitation occurs; followed by at fand Pagain after bubble temperature is lowered; detecting power on time (at P, f), power off time or amplitude of each waveform output by the power supply; comparing the detected power on time with a preset time T, power off time with a preset time &#x3c4;, amplitude of each waveform with a preset value, if the detected power on time is longer than &#x3c4;, or power off time is shorter than &#x3c4;, or amplitude of any waveform is larger than the preset value, shut down the power supply and send out an alarm.

The present invention discloses a method for effectively cleaning vias, trenches or recessed areas on a substrate using an ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside vias, trenches or recessed areas on the substrate increasing to a first set value, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside the vias, trenches or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

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Shanghai, China

Zhaowei Jia