Iqe Plc

Zhaoquan Zeng

Joel Mark Fastenau

Scott Alan Nelson

Michael Vincent Kattner

Philip Lee Frey

Dmitri Lubyshev

Amy Wing Kwan Liu

Hubert Krysiak

Aled Owen Morgan

Stuart Andrew Edwards

Matthew Fetters

An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.

Optoelectronic devices formed over a buffer

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Zhaoquan Zeng