Boe Technology Group Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Beijing Zitiao Network Technology Co., Ltd.

Zhaojun Wang

Hongru Zhou

Chao Zhang

Zhonghao Huang

Kunkun Gao

Rui Wang

Kai Wang

Xu Wu

Yongliang Zhao

Yao Wang

Xiaonan Dong

Zhiyong Ning

Yutong Yang

Siyu Hou

Long Qin

Chaodong Wang

The present disclosure provides a data processing method and apparatus, an electronic device, a storage medium, and a program product. The data processing method includes: displaying a first window at a first position of a first document in response to receiving a triggering operation on a first control in the first document, wherein the first window includes an approval flow list; and displaying approval flow information of a first approval flow at the first position of the first document in response to receiving a selection operation on the first approval flow in the approval flow list.

Data processing method and apparatus, electronic device, storage medium, and program product

A half via hole structure, a method for manufacturing the same, an array substrate, and a display panel are provided. The half via hole structure includes: a spacer layer arranged on an underlaying substrate; a passivation layer arranged on the spacer layer and provided with a first via hole, an orthographic projection of the first via hole on the underlaying substrate being within that of the spacer layer on the underlaying substrate; a first conductive layer arranged on the spacer layer and having a width smaller than a diameter of the first via hole; an insulating layer arranged between the spacer layer and the passivation layer and provided with a second via hole; and a second conductive layer arranged on the passivation layer and overlapped with the first conductive layer through the first via hole.

Half via hole structure, manufacturing method thereof, array substrate, and display panel

There is provided a thin film transistor including: a substrate; a gate electrode and a first electrode in a single layer on the substrate; an active layer above the first electrode, an orthographic projection of the active layer on the substrate at least partially covers an orthographic projection of the first electrode on the substrate; a first insulation layer covering the gate electrode, the first electrode, the active layer, a portion of the substrate exposed between the gate electrode and the active layer, and another portion of the substrate exposed between the gate electrode and the first electrode; and a second electrode above the first insulation layer, an orthographic projection of the second electrode on the substrate at least partially covers the orthographic projection of the active layer on the substrate, and the second electrode is connected to the active layer through a via-hole in the first insulation layer.

Thin film transistor and method for manufacturing the same, display panel and method for manufacturing the same

The disclosure discloses a thin film transistor, a method for fabricating the same, an array substrate, and a display panel. The thin film transistor includes: a first conductive layer on a base substrate, a first insulation layer on a side of the first conductive layer facing away from the base substrate, and a second conductive layer on a side of the first insulation layer facing away from the first conductive layer, wherein an active layer is arranged on a side of the first insulation layer facing the first conductive layer, and/or a side thereof facing the second conductive layer.

Thin film transistor, method for fabricating the same, array substrate, and display panel

Growing community of inventors

Beijing, China

Zhaojun Wang