Nano and Advanced Materials Institute Limited

The Hong Kong University of Science and Technology

Zhaojun Liu

Kei May Lau

Chi Wing Keung

Chik Patrick Yue

Wing Cheung Chong

Chu Hong Wang

Wai Keung Cho

A passive-matrix light-emitting diodes on silicon (LEDoS) micro-display is presented herein. The LEDoS micro-display comprises a passive-matrix micro-light-emitting diode (LED) array comprising passive-matrix micro-light-emitting diodes (LEDs), and a display driver configured to apply column signals to columns of LED pixels of the passive-matrix micro-LED array and scan signals to rows of the LED pixels, wherein the passive-matrix micro-LED array is flip-chip bonded to the display driver based on solder bumps located at peripheral areas of the passive-matrix micro-LED array.

Passive-matrix light-emitting diodes on silicon micro-display

Image projection utilizing light-emitting diodes on a silicon (LEDoS) substrate is described herein. LEDoS devices selectively activate LED pixels to produce light. Light can excite color conversion materials of the LEDoS devices to form color images. Images can be projected onto a projection surface.

LEDoS projection system

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.

Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using PMOS process, NMOS process, or CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the PMOS/NMOS/CMOS process can be eliminated.

Monolithic full-color LED micro-display on an Active Matrix panel manufactured using flip-chip technology

Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology

Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display

Growing community of inventors

Hong Kong, China

Zhaojun Liu