Contemporary Amperex Technology (hong Kong) Limited

Contemporary Amperex Technology Co., Ltd.

Zhaohui Liu

Yongsheng Guo

Guodong Chen

Yandong Wang

Chuying Ouyang

Shuojian Su

Weile Lin

Yanfen Wang

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (). The photoactive crystalline material layer () includes a penetrating crystal grain (), where the penetrating crystal grain () is a crystal grain penetrating through the photoactive crystalline material layer (), and a percentage p of a quantity of penetrating crystal grains () in a total quantity of crystal grains of the photoactive crystalline material layer () is ≥80%. The photoactive crystalline material layer () includes a backlight side () and a backlight crystal grain (), where the backlight crystal grain () is a crystal grain exposed to the backlight side () and has a backlight crystal face exposed to the backlight side (). At least one region of the backlight side () has an average flatness index Rbeing ≤75.

A/M/X crystalline material, photovoltaic device, and preparation methods thereof

A method for forming a hole transport layer on a surface of a substrate includes providing M target materials comprising inorganic hole transport materials and forming the hole transport layer on the surface of the substrate using magnetron sputtering. The hold transport layer at least comprises N consecutive sub-layers. M and N are integers and 2≤N≤M. One of the M target materials is a doped target material further comprising a doping material.

Method for forming hole transport layer on surface of substrate, hole transport layer, solar cell and preparation method therefor, and photovoltaic module

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

Preparation method for perovskite film, and related perovskite film and solar cell

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Ningde, China

Zhaohui Liu