No. 24 Research Institute of China Electronics Technology Group Corporation

China Electronics Technology Group Corporation No. 24 Research Institute

Zhaohuan Tang

Kaizhou Tan

Yonghui Yang

Yi Zhong

Ruzhang Li

Yuxin Wang

Gangyi Hu

Hequan Jiang

Jianan Wang

Peijian Zhang

Yong Liu

Tian Xiao

Jiahao Zhang

Xiaojun Fu

Yang Cao

Kunfeng Zhu

Peng Wang

The disclosure provides a power semiconductor device and manufacturing method thereof. A plurality of second resistive field plate structures extending through an epitaxial layer in a first direction into a substrate are arranged in a termination region of the epitaxial layer and the plurality of second resistive field plate structures are arranged radially in a first plane. A plurality of tightly coupled second resistive field plates extending from a side close to a cell region to a side far away from the cell region form a more uniform three-dimensional electric field distribution diverging around the cell region, which optimizes a guiding and binding effect on a charge in a space depletion region of the cell region and improves a withstand voltage performance of the whole power semiconductor device.

Power semiconductor device and manufacturing method thereof

A semiconductor cell structure and power semiconductor device, wherein, the semiconductor cell structure includes: a highly-doped semiconductor material region, an epitaxial layer, a dielectric insulating layer, a semi-insulating material, and an active device region, a deep groove is further etched on the epitaxial layer, the deep groove vertically extends into the highly-doped semiconductor material region, the dielectric insulating layer is formed on a side wall inside the deep groove, and the deep groove is filled with the semi-insulating material. The cell structure can be applied to the power semiconductor device during actual application, the present invention dramatically reduces the difficulty of the process implementation, relaxes the harsh requirements on charge balance, broadens the tolerant charge mismatch percentage by approximately ten times, and also improves the long-term reliability of normal operation of the device cell at the same time.

Semiconductor cell structure and power semiconductor device

Growing community of inventors

Chongqing, China

Zhaohuan Tang