Chinese Academy of Sciences

Zhaohao Zhang

Huaxiang Yin

Tianchun Ye

Qingzhu Zhang

Jiaxin Yao

A gate-all-around nanowire device and a method for forming the gate-all-around nanowire device. A first fin and a dielectric layer on the first fin are formed on a substrate. The first fin includes the at least one first epitaxial layer and the at least one second epitaxial layer that are alternately stacked. The dielectric layer exposes a channel region of the first fin. A doping concentration at a lateral surface of the channel region and a doping concentration at a central region of the channel region are different from each other in the at least one second epitaxial layer. After the at least one first epitaxial layer is removed from the channel region, the at least one second epitaxial layer in the channel region serves as at least one nanowire. A gate surrounding the at least one nanowire is formed.

Method for forming gate-all-around nanowire device

A negative capacitance field effect transistor (NCFET) and a manufacturing method thereof. The NCFET includes: a substrate structure, including a MOS region; a gate insulating dielectric structure, covering the MOS region; and a metal gate stack layer, covering the gate insulating dielectric structure. The gate insulating dielectric structure includes an interface oxide layer, a HfOlayer, a doping material layer, and a ferroelectric material layer, which are sequentially stacked along a direction away from the substrate structure. A ferroelectric material in the ferroelectric material layer is HfAO, A represents a doping element, and 0.1&#x2264;x&#x2264;0.9. A material forming the doping material layer is AOor A, and a ratio of y/z is equal to 1/2, 2/3, 2/5 or 1/1. Ferroelectric characteristics, material stability, and material reliability of the NCFET are improved by increasing domain polarity of the ferroelectric material.

Growing community of inventors

Beijing, China

Zhaohao Zhang