Halo Microelectronics International

Texas Instruments Corporation

Zhao Fang

Gangqiang Zhang

Wenchao Qu

Jose Antonio Vieira Formenti

Mark Benjamin Welty

Lijie Zhao

Suming Lai

Kenneth Chung-Yin Kwok

Yang Xu

Eddie W Yu

Emmanuel Osei Boakye

An apparatus includes a first switch and a second switch connected in series between an input voltage bus and ground, a bootstrap capacitor connected between a bootstrap voltage bus, and a common node of the first switch and the second switch, and a bias power control circuit configured to function as a switched capacitor bootstrap circuit when the apparatus is configured to operate in a high impedance PFM mode, and configured to function as an active bootstrap circuit when the apparatus is configured to operate in another operating mode.

Bootstrap apparatus and control method

An apparatus includes a first drain/source region and a second drain/source region surrounded by an isolation ring formed over a substrate, the isolation ring formed being configured to be floating, and a first diode connected between the substrate and the isolation ring, wherein the first diode is a Schottky diode.

Latch-up free high voltage device

A circuit includes input terminals adapted to be coupled to a battery; a ground terminal; and an electrostatic discharge (ESD) protection circuit coupled to the input terminals. The ESD protection circuit includes: a switch coupled between the ground terminal and the input terminals; and a control circuit coupled to the input terminals and to the switch. The control circuit is configured to: detect an ESD event at one of the input terminals; detect a transient voltage at one of the input terminals, in which the transient voltage is caused by an initial coupling of that input terminal to the battery; detect a condition in which the switch has been closed for longer than a threshold amount of time; close the switch responsive to the detected ESD event; and open the switch responsive to the detected transient voltage or the detected condition.

Electrostatic discharge (ESD) protection circuit with disable feature based on hot-plug condition detection

A low dropout regulator includes a first transistor having a first drain/source terminal coupled to an input terminal of a regulator, and a second drain/source terminal coupled to an output terminal of the regulator, a second transistor having a first drain/source terminal coupled to the input terminal of the regulator, and a second drain/source terminal coupled to the output terminal of the regulator through a resistor, and an error amplifier having an inverting input configured to receive a reference, a non-inverting input configured to detect an output voltage of the regulator, and an output coupled to gates of the first transistor and the second transistor.

Low dropout regulator and control method

An ESD protection apparatus includes a discharge resistor and a transistor connected in series between a first voltage rail and a second voltage rail, a first coupling capacitor, a diode and a first bias resistor connected in series between the first voltage rail and the second voltage rail, wherein a common node of the diode and the first bias resistor is connected to a gate of the transistor, and an ESD protection device connected between the first voltage rail and the second voltage rail.

ESD protection apparatus and control method

A signal processing apparatus includes a signal processing circuit configured to process a signal obtained from a voltage bus, a high voltage circuit configured to withstand a voltage stress when a high voltage is applied to the voltage bus, and a bypass circuit configured to bypass the high voltage circuit when a low voltage is applied to the voltage bus.

Signal processing apparatus and control method

An apparatus includes a first diode and a second diode connected in series between a first voltage terminal and a second voltage terminal, a switch connected between the first voltage terminal and the second voltage terminal, and a clamping threshold circuit connected between a common node of the first diode and the second diode, and a gate of the switch, wherein the clamping threshold circuit is configured such that in response to a voltage surge applied to the common node of the first diode and the second diode, the switch is turned on once the voltage surge is greater than a predetermined threshold.

Surge protection apparatus

A bidirectional flat clamp device includes a first device node and a second device node. The bidirectional flat clamp device also includes a first switch and a second switch coupled in series between the first and second device nodes. The bidirectional flat clamp device also includes at least one switch driver coupled to the first and second switches. The bidirectional flat clamp device also includes a first current path between the first and second device nodes, the first current path having a first diode, a voltage sensor circuit, and a second diode. The bidirectional flat clamp device also includes a second current path between the first and second device nodes, the second current path having a third diode, the voltage sensor circuit, and a fourth diode.

Bidirectional flat clamp device with shared voltage sensor circuit

A surge protection device for providing bidirectional detections of one or more surge events. The device has low dynamic resistance during a surge protection mode, and it conducts ultra-low leakage current outside of the surge protection mode. In one implementation, the device includes first and second power transistors, a sensing circuit, and a driver circuit. The first power transistor includes a first source terminal that is coupled to the substrate, and the second power transistor includes a second source terminal that is coupled to the substrate. The sensing circuit is configured to detect a voltage of the first pin relative to the second pin and generate a sense signal when the voltage exceeds a threshold. The driver circuit is configured to generate a driver signal based on the sense signal and output the driver signal to at least one of the first or second gate terminal.

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Plano, TX, United States of America

Zhao Fang