Zhang Fan

Jinghu Li

An Lin

Hanghui Tu

Liangqiong Shi

Weitan Yao

Weiyin Zheng

A 10 G rate OLT terminal transceiver integrated chip based on XGPON and DFB laser includes: a burst mode receiver RX, a continuous mode transmitter TX and a digital control unit DIGIITAL. The burst mode receiver RX amplifies an optical signal from each ONU client into an electrical signal through a burst TIA, processes double-detection for amplitude and frequency of the electrical signal, outputs the signal whose amplitude and waveform pulse width meet the threshold requirements to the host, and uses a fast recovery module to control the timing to meet the XGPON protocol. The continuous mode transmitter TX receives the electrical signal attenuated by the PCB, and selects the bypass BYPASS path or the clock data recovery CDR path according to the degree of attenuation. The digital control unit DIGIITAL is used to provide control signals for the burst mode receiver RX and the continuous mode transmitter TX.

10G rate OLT terminal transceiver integrated chip based on XGPON with DFB laser

A 10G rate OLT terminal transceiver integrated chip based on XGSPON with EML laser includes: a burst mode receiver RX which processes amplitude detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference and to meet the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which communicates with the host and provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER.

10G rate OLT terminal transceiver integrated chip based on XGSPON with EML laser

A 10G rate OLT terminal transceiver integrated chip based on XGPON and EML laser includes: a burst mode receiver RX which amplifies an electrical signal originated each ONU client and processed through a burst mode receiver TIA, processes amplitude and frequency double-detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to meet the timing sequence requirement of the XGPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER to supply working power to the chip.

10G rate OLT terminal transceiver integrated chip based on XGPON with EML laser

A DFB laser DC-coupled output power configuration scheme with adjustable voltage difference. utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors Cand C, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V and the problems that the output eye diagram is severely cracked and cannot be used when the traditional DFB laser configuration scheme with an external 3.3V power supply is tested at high temperature are solved.

DFB laser DC-coupled output power configuration scheme with adjustable voltage difference

A 10G rate OLT terminal transceiver integrated chip based on EPON with EML laser includes: a burst mode receiver RX which processes signal amplification and selects one of the two preset channels as a working channel for output through receiving an external command from a host; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGITAL for path selection of the burst mode receiver RX; and a power module POWER, wherein the opening and closing of the two rate channels are controlled by the level judgment unit and the output blocking unit.

10G rate OLT terminal transceiver integrated chip based on EPON with EML laser

A 10G rate OLT terminal transceiver integrated chip based on XGSPON and DFB laser includes: a burst mode receiver RX which amplifies an optical signal from each ONU client into an electrical signal through a burst transimpedance amplifier TIA, processes amplitude detection, and outputs the signal whose amplitude met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference, thereby meeting the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path for activation according to a degree of attenuation; and a digital control unit DIGIITAL which communicates with the host and provides control signals for the burst mode receiver RX and the continuous mode transmitter TX.

10G rate OLT terminal transceiver integrated chip based on XGSPON with DFB laser

A DFB laser DC-coupled output power configuration scheme belongs to the field of laser drivers in optical communication integrated circuits. The present invention solves the existing problems in the conventional DFB laser power supply configuration scheme. The power configuration scheme of the present invention utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors Cand C, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V.

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Xiamen, China

Zhang Fan