Chartered Semiconductor Manufacturing Ltd (corporation)

Zhang Bei Chao

Alan Cuthbertson

Hsia Liang Choo

Tan Juan Boon

Zhang Fan

Chok Kho Liep

Liu Wuping

Lim Yeow Kheng

A structure and method for an improved a bond pad structure. A top wiring layer and a top dielectric (IMD) layer over a semiconductor structure are provided. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. A buffer opening is formed in the buffer dielectric layer exposing at least of portion of the top wiring layer. A barrier layer is formed over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. The conductive buffer layer is planarized to form a buffer pad in the buffer opening. A passivation layer is formed over the buffer pad and the buffer dielectric layer. A bond pad opening is formed in the passivation layer over at least a portion of the buffer pad. A bond pad support layer is formed over the buffer pad and the buffer dielectric layer. A bond pad layer is formed over the bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.

Structure and method for fabricating a bond pad structure

A structure and method for an improved a bond pad structure. We provide a top wiring layer and a top dielectric (IMD) layer over a semiconductor structure. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. We form a buffer opening in the buffer dielectric layer exposing at least of portion of the top wiring layer. We form a barrier layer over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. We planarize the conductive buffer layer to form a buffer pad in the buffer opening. We form a passivation layer over the buffer pad and the buffer dielectric layer. We form a bond pad opening in the passivation layer over at least a portion of the buffer pad. We form a bond pad support layer over the buffer pad and the buffer dielectric layer. We form a bond pad layer over the a bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.

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Singapore, Singapore

Zhang Bei Chao